采用氧化钼作为空穴选择层的锗基异质结构太阳能电池的 TCAD 仿真

IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Modelling and Simulation in Materials Science and Engineering Pub Date : 2024-07-14 DOI:10.1088/1361-651x/ad5b7b
Haris Mehmood and Hisham Nasser
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引用次数: 0

摘要

氧化钼(MoOx)已被用作光伏(PV)应用中的空穴萃取薄膜;然而,人们对它与基于锗(Ge)的太阳能电池之间的相互作用了解较少。本文首次旨在建立 Ge 太阳能电池的物理模型,该模型在光伏设备面向阳光的前端加入了用于空穴传输的 MoOx。然而,光伏器件内的电荷传输过程受到多个设计参数的影响,需要进行优化。氧化钼的功函数越高,对电子少数载流子的阻挡高度就越高,这有利于在氧化钼/锗的前端界面挤出空穴。加入非晶硅(i-a-Si:H)钝化层后,电荷载流子的重组逐渐减少。同样,插入 i-a-Si:H的钝化和背表面场(BSF)堆栈可增强电场,并同样减少器件后侧的重组。提高 BSF 的掺杂浓度有助于能带的良好排列,从而改善太阳能电池内部的电荷传输,因为背面钝化可保持电场强度,加速电荷载流子的移动。然而,由于前钝化膜厚度较大时会产生寄生光吸收,因此优化前钝化膜的厚度具有挑战性。与参考器件的比较研究表明,拟议器件的转换效率 (η)从 4.23% 逐步提高到 13.10%,Jsc 为 46.4 mA cm-2,Voc 为 383 mV,FF 为 74%。预计该研究将填补采用高功函数 MoOx 作为载流子选择层的 Ge 基太阳能电池物理器件建模方面的研究空白,有利于开发高效多结太阳能电池。
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TCAD simulation of germanium-based heterostructure solar cell employing molybdenum oxide as a hole-selective layer
Molybdenum Oxide (MoOx) has been used as a hole-extraction film for photovoltaic (PV) applications; however, its interaction with Germanium (Ge)-based solar cells is less understood. For the first time, this paper aims to physically model the Ge solar cell that incorporates MoOx for hole transportation at the front side of the PV device facing the sunlight. However, the charge transportation process within the PV device is influenced by several design parameters that need optimization. A higher work function of MoOx increases the barrier height against minority carriers of electrons which is beneficial for extricating holes at the front interface of MoOx/Ge. A progressive reduction in the recombination of charge carriers has been observed by including a passivation layer of amorphous silicon (i-a-Si:H). Similarly, inserting a passivation and back surface field (BSF) stack of i-a-Si:H strengthens the electric field and likewise reduces the recombination at the rear side of the device. An enhanced doping concentration of BSF assists in the favorable alignment of energy bands for improved charge transportation within the solar cell as the rear passivation maintains the field strength for accelerated movement of charge carriers. However, optimizing the thickness of the front-passivation film is challenging due to the parasitic absorption of light at larger thicknesses. A comparative study with the reference device revealed that the proposed device exhibited a step-increase in the conversion efficiency (η) from 4.23% to 13.10%, with a higher Jsc of 46.4 mA cm−2, Voc of 383 mV, and FF of 74%. The proposed study is anticipated to meet the research gap in the physical device modelling of Ge-based solar cells employing high work function MoOx as a carrier-selective layer that could be conducive to the development of highly efficient multijunction solar cells.
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来源期刊
CiteScore
3.30
自引率
5.60%
发文量
96
审稿时长
1.7 months
期刊介绍: Serving the multidisciplinary materials community, the journal aims to publish new research work that advances the understanding and prediction of material behaviour at scales from atomistic to macroscopic through modelling and simulation. Subject coverage: Modelling and/or simulation across materials science that emphasizes fundamental materials issues advancing the understanding and prediction of material behaviour. Interdisciplinary research that tackles challenging and complex materials problems where the governing phenomena may span different scales of materials behaviour, with an emphasis on the development of quantitative approaches to explain and predict experimental observations. Material processing that advances the fundamental materials science and engineering underpinning the connection between processing and properties. Covering all classes of materials, and mechanical, microstructural, electronic, chemical, biological, and optical properties.
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