ZnS 量子点的结构、形态、电化学和光学特性:La3+ 离子的影响

Q3 Physics and Astronomy Results in Optics Pub Date : 2024-07-01 DOI:10.1016/j.rio.2024.100727
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引用次数: 0

摘要

采用简便的共沉淀技术制备了掺杂 La 的 ZnS 量子点。XRD 图谱显示 ZnS 晶格为立方结构。我们测得合成纳米粒子的尺寸约为 2 nm。结构表面的硫空位产生了一些缺陷。HR-TEM 和 FE-SEM 结果也证实了其尺寸、形态和其他结构实体。EDS 和傅立叶变换红外光谱结果证实了样品的成分。我们测试了样品的电化学行为,发现掺杂了 4% La 的 ZnS 具有很高的比电容。紫外-可见研究观察到了光学吸光度的增强。由于掺入了 La 离子,带隙发生了红移。我们观察到掺杂 La 2 at.% 的 ZnS 量子点具有很高的透光率。聚合辐射结果显示,紫外区的辐射较弱,可见光区则有一些与缺陷有关的辐射。
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Structural, morphological, electrochemical and optical properties ZnS quantum dots: Influence of La3+ ions

The La-doped ZnS quantum dots were prepared by the facile co-precipitation technique. XRD patterns revealed the cubic structure of the ZnS crystal lattice. We measure the size of the synthesized nanoparticles at approximately 2 nm. Sulfur vacancies on the structure’s surface produce some defects. The HR-TEM and FE-SEM results also confirm the size, morphology, and other structural entities. The EDS and FTIR results confirmed the composition of the samples. We tested the electrochemical behaviors of the samples, and found that La 4 at% doped-ZnS offered a high specific capacitance. The enhancement of optical absorbance was observed by the UV–vis studies. A red shift was received in band gap due to incorporation of La ions. We observe high optical transmittance for La 2 at.% doped-ZnS quantum dots. PL emission results showed a weak emission in the UV region, and some defect-related emissions in the visible region.

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来源期刊
Results in Optics
Results in Optics Physics and Astronomy-Atomic and Molecular Physics, and Optics
CiteScore
2.50
自引率
0.00%
发文量
115
审稿时长
71 days
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