为 K 波段应用设计和模拟集成射频 MEMS 分流开关的可调带阻滤波器

Sk Shoukath Vali, G. Shanthi, Anish Yalavarthi, Sahithi Pingalakani, Dasari Chandrika, Chokkakula Ganesh, K. Girija Sravani
{"title":"为 K 波段应用设计和模拟集成射频 MEMS 分流开关的可调带阻滤波器","authors":"Sk Shoukath Vali, G. Shanthi, Anish Yalavarthi, Sahithi Pingalakani, Dasari Chandrika, Chokkakula Ganesh, K. Girija Sravani","doi":"10.1007/s00542-024-05720-0","DOIUrl":null,"url":null,"abstract":"<p>This paper represents the design and simulation of tunable bandstop filters by integrated with an RF MEMS shunt switch. The transformation of the bandpass filter to the bandstop filter is also done in this paper. The bandpass and bandstop filters are designed utilizing ECE-shaped DGS resonators within the coplanar waveguide (CPW) structure. Three different types of RF MEMS switches are proposed and investigated. The switch with low pull in voltage and better RF characteristics is considered for integration with filters The BPF exhibits an insertion loss of under 1.6 dB. It offers a relative 3-dB bandwidth of 60% and a 30-dB bandwidth of 77%. In the case of the BSF, it effectively achieves a 20 dB stop band at 20.5 GHz, maintaining a return loss of only 0.3 dB. The tunability of the filter is observed by integrating a MEMS capacitive shunt switch onto the transmission line. A pull in voltage of 4 V is achieved with a high capacitance ratio of 63.9.The simulation and parametric analysis of the RF MEMS switch is carried out by COMSOL and the RF performance of the switch, tunability of the filters are studied with the help of the HFSS FEM tools. The mechanical resonance frequency, other RF performance and tunability of the filters attained a frequency range (18–27 GHz). So the proposed switch and filters are suitable for K band applications, especially for satellite communications applications.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"55 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and simulation of tunable bandstop filters by integrating RF MEMS shunt switch for K-band applications\",\"authors\":\"Sk Shoukath Vali, G. Shanthi, Anish Yalavarthi, Sahithi Pingalakani, Dasari Chandrika, Chokkakula Ganesh, K. Girija Sravani\",\"doi\":\"10.1007/s00542-024-05720-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This paper represents the design and simulation of tunable bandstop filters by integrated with an RF MEMS shunt switch. The transformation of the bandpass filter to the bandstop filter is also done in this paper. The bandpass and bandstop filters are designed utilizing ECE-shaped DGS resonators within the coplanar waveguide (CPW) structure. Three different types of RF MEMS switches are proposed and investigated. The switch with low pull in voltage and better RF characteristics is considered for integration with filters The BPF exhibits an insertion loss of under 1.6 dB. It offers a relative 3-dB bandwidth of 60% and a 30-dB bandwidth of 77%. In the case of the BSF, it effectively achieves a 20 dB stop band at 20.5 GHz, maintaining a return loss of only 0.3 dB. The tunability of the filter is observed by integrating a MEMS capacitive shunt switch onto the transmission line. A pull in voltage of 4 V is achieved with a high capacitance ratio of 63.9.The simulation and parametric analysis of the RF MEMS switch is carried out by COMSOL and the RF performance of the switch, tunability of the filters are studied with the help of the HFSS FEM tools. The mechanical resonance frequency, other RF performance and tunability of the filters attained a frequency range (18–27 GHz). So the proposed switch and filters are suitable for K band applications, especially for satellite communications applications.</p>\",\"PeriodicalId\":18544,\"journal\":{\"name\":\"Microsystem Technologies\",\"volume\":\"55 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microsystem Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1007/s00542-024-05720-0\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microsystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/s00542-024-05720-0","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了与射频微机电系统并联开关集成的可调带阻滤波器的设计和仿真。本文还完成了从带通滤波器到带阻滤波器的转换。带通和带阻滤波器是利用共面波导(CPW)结构中的 ECE 形 DGS 谐振器设计的。本文提出并研究了三种不同类型的射频 MEMS 开关。BPF 的插入损耗低于 1.6 dB。它的 3 分贝相对带宽为 60%,30 分贝带宽为 77%。就 BSF 而言,它在 20.5 GHz 频率上有效地实现了 20 dB 的阻带,回波损耗仅为 0.3 dB。通过在传输线上集成 MEMS 电容并联开关,可以观察到滤波器的可调谐性。COMSOL 对射频 MEMS 开关进行了仿真和参数分析,并借助 HFSS FEM 工具研究了开关的射频性能和滤波器的可调谐性。滤波器的机械共振频率、其他射频性能和可调谐性达到了(18-27 GHz)的频率范围。因此,建议的开关和滤波器适用于 K 波段应用,尤其是卫星通信应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design and simulation of tunable bandstop filters by integrating RF MEMS shunt switch for K-band applications

This paper represents the design and simulation of tunable bandstop filters by integrated with an RF MEMS shunt switch. The transformation of the bandpass filter to the bandstop filter is also done in this paper. The bandpass and bandstop filters are designed utilizing ECE-shaped DGS resonators within the coplanar waveguide (CPW) structure. Three different types of RF MEMS switches are proposed and investigated. The switch with low pull in voltage and better RF characteristics is considered for integration with filters The BPF exhibits an insertion loss of under 1.6 dB. It offers a relative 3-dB bandwidth of 60% and a 30-dB bandwidth of 77%. In the case of the BSF, it effectively achieves a 20 dB stop band at 20.5 GHz, maintaining a return loss of only 0.3 dB. The tunability of the filter is observed by integrating a MEMS capacitive shunt switch onto the transmission line. A pull in voltage of 4 V is achieved with a high capacitance ratio of 63.9.The simulation and parametric analysis of the RF MEMS switch is carried out by COMSOL and the RF performance of the switch, tunability of the filters are studied with the help of the HFSS FEM tools. The mechanical resonance frequency, other RF performance and tunability of the filters attained a frequency range (18–27 GHz). So the proposed switch and filters are suitable for K band applications, especially for satellite communications applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of the initial viscosity and substrate corner geometry on edge beading of photoresist films An investigation on static, vibration and stability analyses of elastically restrained FG porous Timoshenko nanobeams Flexible capacitive humidity sensor based on potassium ion-doped PVA/CAB double-layer sensing film Modelling and optimization of compound lever-based displacement amplifier in a MEMS accelerometer Research on SMA motor modelling and control algorithm for optical image stabilization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1