{"title":"通过可控地引入界面应变,监测和设计单层 WS2 与基底之间的界面耦合","authors":"Xiaofei Yue, Jiajun Chen, Jinkun Han, Yabing Shan, Shuwen Shen, Wenxuan Wu, Bingjie Liu, Lijia Li, Yu Chen, Rongjun Zhang, Laigui Hu, Ran Liu, Zhijun Qiu, Chunxiao Cong","doi":"10.1007/s40843-024-2948-9","DOIUrl":null,"url":null,"abstract":"<p>The interface properties in two-dimensional (2D) layered materials and their van der Waals (vdW) homo-/heterostructures are of importance in both uncovering novel physical phenomena and optimizing device performance. Despite considerable research interest and enthusiasm direct toward the interlayer coupling in 2D homo- and heterostructures, there is limited research on the coupling at the 2D layered material-substrate interface. This limitation is due to the challenges in achieving direct detection. Currently, the coupling mechanisms at the 2D layered material-substrate interface is ambiguous, which needs greater attention. In this study, we have systematically investigated the interface coupling between monolayer WS<sub>2</sub> and its supported substrates using high-temperature and high-vacuum <i>in-situ</i> Raman spectroscopy through monitoring the low-frequency Raman mode of monolayer WS<sub>2</sub>. Our findings reveal that both interfacial spacing and strain can significantly affect the coupling strength between the monolayer WS<sub>2</sub> and the supported substrate. More notably, we found that the strategic introduction of appropriate interfacial strain can effectively enhance the interface coupling. Consequently, we have succeeded in achieving effective regulation of the sample-substrate coupling <i>via</i> a convenient way of controlling the cooling process during annealing. Our findings contribute to a deeper understanding of the coupling correlation between 2D layered materials and substrates, which is of great significance for the design and optimization of high-performance devices based on 2D layered semiconductors.\n</p>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":null,"pages":null},"PeriodicalIF":6.8000,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monitoring and engineering interface coupling between monolayer WS2 and substrate through controllably introducing interfacial strain\",\"authors\":\"Xiaofei Yue, Jiajun Chen, Jinkun Han, Yabing Shan, Shuwen Shen, Wenxuan Wu, Bingjie Liu, Lijia Li, Yu Chen, Rongjun Zhang, Laigui Hu, Ran Liu, Zhijun Qiu, Chunxiao Cong\",\"doi\":\"10.1007/s40843-024-2948-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The interface properties in two-dimensional (2D) layered materials and their van der Waals (vdW) homo-/heterostructures are of importance in both uncovering novel physical phenomena and optimizing device performance. Despite considerable research interest and enthusiasm direct toward the interlayer coupling in 2D homo- and heterostructures, there is limited research on the coupling at the 2D layered material-substrate interface. This limitation is due to the challenges in achieving direct detection. Currently, the coupling mechanisms at the 2D layered material-substrate interface is ambiguous, which needs greater attention. In this study, we have systematically investigated the interface coupling between monolayer WS<sub>2</sub> and its supported substrates using high-temperature and high-vacuum <i>in-situ</i> Raman spectroscopy through monitoring the low-frequency Raman mode of monolayer WS<sub>2</sub>. Our findings reveal that both interfacial spacing and strain can significantly affect the coupling strength between the monolayer WS<sub>2</sub> and the supported substrate. More notably, we found that the strategic introduction of appropriate interfacial strain can effectively enhance the interface coupling. Consequently, we have succeeded in achieving effective regulation of the sample-substrate coupling <i>via</i> a convenient way of controlling the cooling process during annealing. Our findings contribute to a deeper understanding of the coupling correlation between 2D layered materials and substrates, which is of great significance for the design and optimization of high-performance devices based on 2D layered semiconductors.\\n</p>\",\"PeriodicalId\":773,\"journal\":{\"name\":\"Science China Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.8000,\"publicationDate\":\"2024-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s40843-024-2948-9\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s40843-024-2948-9","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Monitoring and engineering interface coupling between monolayer WS2 and substrate through controllably introducing interfacial strain
The interface properties in two-dimensional (2D) layered materials and their van der Waals (vdW) homo-/heterostructures are of importance in both uncovering novel physical phenomena and optimizing device performance. Despite considerable research interest and enthusiasm direct toward the interlayer coupling in 2D homo- and heterostructures, there is limited research on the coupling at the 2D layered material-substrate interface. This limitation is due to the challenges in achieving direct detection. Currently, the coupling mechanisms at the 2D layered material-substrate interface is ambiguous, which needs greater attention. In this study, we have systematically investigated the interface coupling between monolayer WS2 and its supported substrates using high-temperature and high-vacuum in-situ Raman spectroscopy through monitoring the low-frequency Raman mode of monolayer WS2. Our findings reveal that both interfacial spacing and strain can significantly affect the coupling strength between the monolayer WS2 and the supported substrate. More notably, we found that the strategic introduction of appropriate interfacial strain can effectively enhance the interface coupling. Consequently, we have succeeded in achieving effective regulation of the sample-substrate coupling via a convenient way of controlling the cooling process during annealing. Our findings contribute to a deeper understanding of the coupling correlation between 2D layered materials and substrates, which is of great significance for the design and optimization of high-performance devices based on 2D layered semiconductors.
期刊介绍:
Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.