Transient features of graphitization and nitrogen-vacancy color centers in a diamond fabricated by localization femtosecond laser direct writing

Femtosecond laser direct writing provides an efficient approach to fabricating single nitrogen vacancy (NV) color centers with a relatively high yield. Different from previously reported NV color centers with a random distribution in a bulk diamond or nanocrystals, this gives an opportunity to study the photophysical properties of single NV color centers with precise numbers and positions. However, ultrafast studies on single NV color centers prepared by localization femtosecond laser direct writing are still rare, especially for the graphitization inside a diamond and its relationship with single NV color centers. Here, we report the broadband transient absorption (TA) spectroscopic features of the graphitization and NV color centers in a diamond fabricated by localization femtosecond laser direct writing at room temperature under 400 nm excitation. In comparison with the graphene oxide film, the bleaching features of the graphitization point array in a diamond are similar to reduced graphene oxide, accompanied by excited state absorption signals from local carbon atom vacancy defects in graphene-like structures induced by laser writing. On the other hand, transient features of laser processing array containing single NV color centers with a yield of ∼50% are different from those of the graphitization point array. Our findings suggest that for ultrashort pulse processing of diamonds, broadband TA spectral signals are sensitive to the surrounding atomic environment of processing sites, which could be applied to laser writing point defects in other materials used as solid-state single photon sources.