利用磁控溅射技术选择获得高硅酸锰薄膜的靶材

IF 0.6 4区材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-07-25 DOI:10.1134/s106377452460042x

M. S. Lukasov, N. A. Arkharova, A. S. Orekhov, T. S. Kamilov, V. V. Klechkovskaya

{"title":"利用磁控溅射技术选择获得高硅酸锰薄膜的靶材","authors":"M. S. Lukasov, N. A. Arkharova, A. S. Orekhov, T. S. Kamilov, V. V. Klechkovskaya","doi":"10.1134/s106377452460042x","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Thin manganese silicide films were obtained on mica by magnetron sputtering from targets of three types. The microstructure and elemental composition of the targets and films were studied by scanning electron microscopy and reflection electron diffraction. The phase composition and structure of the films over depth (cuts) were controlled by scanning and transmission electron microscopy. It has been shown that, when depositing films from poly- and single-crystal targets of higher manganese silicide, in contrast to a target from sintered Мn and Si powders, one can obtain polycrystalline films of higher manganese silicide of the Mn<sub>4</sub>Si<sub>7</sub> composition after subsequent 1-h annealing at a temperature of 800 K and a pressure of 10<sup>–3</sup> Pa.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering\",\"authors\":\"M. S. Lukasov, N. A. Arkharova, A. S. Orekhov, T. S. Kamilov, V. V. Klechkovskaya\",\"doi\":\"10.1134/s106377452460042x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>Thin manganese silicide films were obtained on mica by magnetron sputtering from targets of three types. The microstructure and elemental composition of the targets and films were studied by scanning electron microscopy and reflection electron diffraction. The phase composition and structure of the films over depth (cuts) were controlled by scanning and transmission electron microscopy. It has been shown that, when depositing films from poly- and single-crystal targets of higher manganese silicide, in contrast to a target from sintered Мn and Si powders, one can obtain polycrystalline films of higher manganese silicide of the Mn<sub>4</sub>Si<sub>7</sub> composition after subsequent 1-h annealing at a temperature of 800 K and a pressure of 10<sup>–3</sup> Pa.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1134/s106377452460042x\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1134/s106377452460042x","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

摘要

摘要通过磁控溅射法在云母上获得了三种类型的硅化锰薄膜。通过扫描电子显微镜和反射电子衍射研究了靶材和薄膜的微观结构和元素组成。通过扫描和透射电子显微镜控制了薄膜深度（切口）的相组成和结构。研究表明，与烧结锰和硅粉末的靶材相比，当从多晶和单晶硅化高锰靶材上沉积薄膜时，在温度为 800 K、压力为 10-3 Pa 的条件下，经过 1 小时的退火，可以获得 Mn4Si7 成分的硅化高锰多晶薄膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

摘要图片

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

Abstract

Thin manganese silicide films were obtained on mica by magnetron sputtering from targets of three types. The microstructure and elemental composition of the targets and films were studied by scanning electron microscopy and reflection electron diffraction. The phase composition and structure of the films over depth (cuts) were controlled by scanning and transmission electron microscopy. It has been shown that, when depositing films from poly- and single-crystal targets of higher manganese silicide, in contrast to a target from sintered Мn and Si powders, one can obtain polycrystalline films of higher manganese silicide of the Mn₄Si₇ composition after subsequent 1-h annealing at a temperature of 800 K and a pressure of 10^–3 Pa.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Crystallography Reports 化学-晶体学

CiteScore

1.10

自引率

28.60%

发文量

审稿时长

4-8 weeks

期刊介绍： Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.