P. A. Aleksandrov, O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, A. L. Vasiliev
{"title":"对高剂量氦植入硅的见解","authors":"P. A. Aleksandrov, O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, A. L. Vasiliev","doi":"10.1134/S1063774524600340","DOIUrl":null,"url":null,"abstract":"<p>The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 10<sup>17</sup> He<sup>+</sup>/cm<sup>2</sup> without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 10<sup>17</sup> He<sup>+</sup>/cm<sup>2</sup> and higher promotes flaking.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 3","pages":"380 - 389"},"PeriodicalIF":0.6000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Insights into High-Dose Helium Implantation of Silicon\",\"authors\":\"P. A. Aleksandrov, O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, A. L. Vasiliev\",\"doi\":\"10.1134/S1063774524600340\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 10<sup>17</sup> He<sup>+</sup>/cm<sup>2</sup> without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 10<sup>17</sup> He<sup>+</sup>/cm<sup>2</sup> and higher promotes flaking.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":\"69 3\",\"pages\":\"380 - 389\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063774524600340\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774524600340","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Insights into High-Dose Helium Implantation of Silicon
The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 1017 He+/cm2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 1017 He+/cm2 and higher promotes flaking.
期刊介绍:
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.