Performance characterization of Ferroelectric GaN HEMT based biosensor

In this manuscript detection of biomolecules has been performed using both the dielectric modulation method as well as gate work function engineering technique for the proposed device ferroelectric GaN HEMT-based biosensor. Many previous literature reports have focused on the underlap technique in most of the biosensor devices but for the first time since we have implemented this innovative concept which has never been implemented before for ferroelectric GaN HEMT biosensor devices. This work has been carried out using Silvaco Atlas TCAD software. From the results it noticed that in comparison to devices without the introduction of biomolecules and with immobilization of biomolecules there is an increase in current value three times, also a positive shift in threshold voltage, and higher sensitivity value as it depends upon factors such as drain current and threshold voltage, etc., and also a reduction in leakage current. The high-concentration 2-DEG results in higher sensitivity to the surface state and gate voltage, and the merits of the device, such as high-voltage and high-frequency. Therefore we conclude that a significant increase in electrostatic properties has been noticed for the case of triple materials gate-based devices with the increase in biomolecule concentration for both side cavity devices.. Therefore it can be concluded that there is increase in performance for DC and Analog performance.