二维场效应晶体管的 LAB 到 FAB 过渡:现有策略和未来趋势

Nanomaterials Pub Date : 2024-07-23 DOI:10.3390/nano14151237
Yury Illarionov, Yezhu Lv, Yehao Wu, Yajing Chai
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引用次数: 0

摘要

过去十年间,二维沟道场效应晶体管的研究取得了巨大进展。从 2010 年代初利用剥离薄片制造单个器件开始,到 2020 年代初,领先的半导体公司正在试生产二维场效应晶体管,并对二维沟道进行垂直堆叠。然而,业界只关注过渡金属二卤化物(TMD)沟道与传统三维氧化物绝缘体(如 Al2O3 和 HfO2)的结合。这带来了许多挑战,如界面质量差和氧化物陷阱导致的可靠性限制。与此同时,实验室(LAB)研究为二维场效应晶体管提供的替代途径直到现在仍未得到重视,尽管利用二维通道的原生氧化物最近已产生了首批二维鳍式场效应晶体管。考虑到过去十年所取得的研究进展,我们将从这个角度讨论二维场效应晶体管产业整合所面临的主要挑战,并提出未来可能采取的措施,以推动这些新兴技术走向市场应用。
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LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends
The last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking of 2D channels made by leading semiconductor companies. However, the industry is focused solely on transition metal dichalcogenide (TMD) channels coupled with conventional 3D oxide insulators such as Al2O3 and HfO2. This has resulted in numerous challenges, such as poor-quality interfaces and reliability limitations due to oxide traps. At the same time, the alternative routes for 2D FETs offered by laboratory (LAB) research have not been appreciated until now, even though the use of the native oxides of 2D channels has recently resulted in the first 2D FinFETs. Considering the research progress achieved in the last decade, from this perspective, we will discuss the main challenges for industry integration of 2D FETs and also suggest possible future steps which could propel these emerging technologies towards market applications.
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