宽带隙材料薄膜中高阶谐波产生的第一原理模拟 [特邀]

Albert Mathew, Sergey Kruk, Shunsuke Yamada, Kazuhiro Yabana, Anatoli Kheifets
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引用次数: 0

摘要

高阶谐波发生(HHG)是实现桌面大小的极紫外(XUV)光源的唯一工艺。高阶谐波发生(HHG)过程通常涉及光与气体或等离子体的相互作用--这些物质相阻碍了此类光源的广泛应用。这激发了对来自纳米结构固体的 HHG 的研究。在此,我们采用时间相关密度函数理论(TDDFT),利用第一原理超级计算机模拟研究纳米级 HHG 的材料平台。我们发现,与硅这种最常见的非线性纳米光子材料相比,氮化铝(AlN)和氮化硅(Si3N4)这两种宽带隙半导体在 XUV 光生成方面具有很高的前景。在计算中,我们假定激励脉冲持续时间为 100 fs,峰值功率为 1×1013W/cm2 ,中心波长为 800 nm。我们证明,在氮化铝材料中,晶体对称性与入射光方向和偏振之间的相互作用能够产生偶次谐波和奇次谐波。我们的研究成果将推动从纳米结构固体中产生高谐波 XUV 光的发展。
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First-principles simulations of high-order harmonics generation in thin films of wide bandgap materials [Invited]
High-order harmonics generation (HHG) is the only process that enables tabletop-sized sources of extreme ultraviolet (XUV) light. The HHG process typically involves light interactions with gases or plasma––material phases that hinder wider adoption of such sources. This motivates the research in HHG from nanostructured solids. Here, we employ the time-dependent density function theory (TDDFT) to investigate material platforms for HHG at the nanoscale using first-principles supercomputer simulations. We reveal that wide bandgap semiconductors, aluminum nitride (AlN) and silicon nitride (Si3N4), are highly promising for XUV light generation when compared to silicon, one of the most common nonlinear nanophotonic materials. In our calculations, we assume excitation with a 100 fs pulse duration, 1×1013W/cm2 peak power, and 800 nm central wavelength. We demonstrate that in AlN material the interplay between the crystal symmetry and the incident light direction and polarization can enable the generation of both even and odd harmonics. Our results should advance the development of high-harmonics generation of XUV light from nanostructured solids.
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