Zhen Guo Ban, Yan Shi, Ning Qian Huang, Zan Kui Meng, Shi Chen Zhu
{"title":"光激发 VO2 超快相变中的类金属单斜相和太赫兹特性","authors":"Zhen Guo Ban, Yan Shi, Ning Qian Huang, Zan Kui Meng, Shi Chen Zhu","doi":"10.1063/5.0215012","DOIUrl":null,"url":null,"abstract":"Photoexcitation is a powerful way to induce phase transition of strongly correlated materials and dynamically control terahertz (THz) devices integrated with photoinduced phase transition (PIPT) materials. To clarify controversies over the physical mechanism between electronic insulator-metal transition (IMT) and structural phase transition (SPT) of photoexcited vanadium dioxide (VO2), the underlying atomic and electronic state changes during photoinduced monoclinic-to-rutile phase transition are illustrated, and the separation with different thresholds between the quasi-instantaneous IMT and the ultrafast SPT is discovered. Below the SPT threshold, there exist metastable states exhibiting the metal-like monoclinic phases, i.e., the strongest metallicity and weak monoclinic phases, when the bond lengths of the V–V pairs are closest. By analyzing the electronic transport properties of these metal-like monoclinic phases, the THz response of the whole phase transition process can be characterized for first time through the quantum-electromagnetic dispersion modeling method. The THz properties of the practical VO2 film are simulated and the great alignments between the measurements and the simulations verify the proposed analysis method, which provides a powerful exploration path and insights for the theoretical analysis and design verification of PIPT materials and their optoelectronic THz devices.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Metal-like monoclinic phase and terahertz characteristics in ultrafast phase transition of photoexcited VO2\",\"authors\":\"Zhen Guo Ban, Yan Shi, Ning Qian Huang, Zan Kui Meng, Shi Chen Zhu\",\"doi\":\"10.1063/5.0215012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photoexcitation is a powerful way to induce phase transition of strongly correlated materials and dynamically control terahertz (THz) devices integrated with photoinduced phase transition (PIPT) materials. To clarify controversies over the physical mechanism between electronic insulator-metal transition (IMT) and structural phase transition (SPT) of photoexcited vanadium dioxide (VO2), the underlying atomic and electronic state changes during photoinduced monoclinic-to-rutile phase transition are illustrated, and the separation with different thresholds between the quasi-instantaneous IMT and the ultrafast SPT is discovered. Below the SPT threshold, there exist metastable states exhibiting the metal-like monoclinic phases, i.e., the strongest metallicity and weak monoclinic phases, when the bond lengths of the V–V pairs are closest. By analyzing the electronic transport properties of these metal-like monoclinic phases, the THz response of the whole phase transition process can be characterized for first time through the quantum-electromagnetic dispersion modeling method. The THz properties of the practical VO2 film are simulated and the great alignments between the measurements and the simulations verify the proposed analysis method, which provides a powerful exploration path and insights for the theoretical analysis and design verification of PIPT materials and their optoelectronic THz devices.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0215012\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0215012","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Metal-like monoclinic phase and terahertz characteristics in ultrafast phase transition of photoexcited VO2
Photoexcitation is a powerful way to induce phase transition of strongly correlated materials and dynamically control terahertz (THz) devices integrated with photoinduced phase transition (PIPT) materials. To clarify controversies over the physical mechanism between electronic insulator-metal transition (IMT) and structural phase transition (SPT) of photoexcited vanadium dioxide (VO2), the underlying atomic and electronic state changes during photoinduced monoclinic-to-rutile phase transition are illustrated, and the separation with different thresholds between the quasi-instantaneous IMT and the ultrafast SPT is discovered. Below the SPT threshold, there exist metastable states exhibiting the metal-like monoclinic phases, i.e., the strongest metallicity and weak monoclinic phases, when the bond lengths of the V–V pairs are closest. By analyzing the electronic transport properties of these metal-like monoclinic phases, the THz response of the whole phase transition process can be characterized for first time through the quantum-electromagnetic dispersion modeling method. The THz properties of the practical VO2 film are simulated and the great alignments between the measurements and the simulations verify the proposed analysis method, which provides a powerful exploration path and insights for the theoretical analysis and design verification of PIPT materials and their optoelectronic THz devices.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces