Design and Evaluation of β-Ga2O3 junction barrier Schottky diode with p-GaN Heterojunction

A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga2O3 heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown capability compared to the traditional Ga2O3 Schottky barrier diode (SBD). By utilizing wide-bandgap p-type GaN, the β-Ga2O3 JBS diodes demonstrate a turn-on voltage (Von) of approximately 0.8 V. Moreover, a breakdown voltage (Vbr) of 880 V and a specific on-resistance (Ron,sp) of 3.96 mΩ·cm2 are achieved, resulting in a Baliga’s figure of merit (BFOM) of approximately 0.2 GW/cm2. A forward current density of 465 A/cm2 at a forward voltage drop of 3 V is attained. The simulated reverse leakage current density remains low at 9.0 mA/cm2 at 800 V. Floating field rings, in conjunction with junction termination extension (JTE), were utilized as edge termination methods to attain a high breakdown voltage. The impact of β-Ga2O3 periodic fin width fluctuations on the electrical characteristics of JBS was investigated. Due to the enhanced sidewall depletion effect caused by p-type GaN, the forward current (IF) and reverse current (IR) decrease when the β-Ga2O3 periodic fin width decreases. The findings of this study indicate the remarkable promise of p-GaN/n-Ga2O3 JBS diodes for power device applications.