单层硒化铟的拉曼光谱和红外光谱中由应变引起的变化:第一原理研究

Xiangyu Zeng, Yutong Chen, Yuanfei Jiang, Laizhi Sui, Anmin Chen, Mingxing Jin
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摘要

单层硒化铟(InSe)是一种二维材料,具有优异的电子和光学特性,可通过应变工程进行显著调节。本研究采用密度泛函理论研究了单层硒化铟在不同双轴应变下的结构和振动特性。声子色散分析证实了单层硒化铟的稳定性,这体现在它不存在虚频。该研究广泛详述了拉曼光谱和红外光谱在应变下的调整情况,显示了反映晶格对称性和电子结构变化的峰值位置移动和强度变化。具体发现包括:在应变作用下,A′1 模式变硬,E″ 和 E′ 模式强度增加,这表明极化性和不对称振动增强。此外,在拉伸和压缩应变作用下,167.3 cm-1 处 E′模式的拉曼强度增加,原因是极化性增强和对称性破坏,而 192.1 cm-1 处 A″2 模式的红外强度降低,可能是偶极矩变化减弱所致。相比之下,低频模式(如 36.8 cm-1 处的 E″)对应变不敏感,这意味着这些模式对较重原子的影响极小。总之,这项研究强调了振动模式对应变引起的变化的敏感性,为了解单层硒化铟在机械应力下的行为提供了宝贵的见解。
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Strain-induced variations in the Raman and infrared spectra of monolayer InSe: A first-principles study
Monolayer indium selenide (InSe), a two-dimensional material, exhibits exceptional electronic and optical properties that can be significantly modulated via strain engineering. This study employed density functional theory to examine the structural and vibrational properties of monolayer InSe under varying biaxial strains. Phonon dispersion analysis confirmed the stability of monolayer InSe, as indicated by the absence of imaginary frequencies. The study extensively detailed how Raman and infrared spectra adjust under strain, showing shifts in peak positions and variations in intensity that reflect changes in lattice symmetry and electronic structures. Specific findings include the stiffening of the A′1 mode and the increased intensity of E″ and E′ modes under strain, suggesting enhanced polarizability and asymmetric vibrations. Moreover, the Raman intensity for the E′ mode at 167.3 cm−1 increased under both tensile and compressive strain due to enhanced polarizability and symmetry disruption, while the IR intensity for the A″2 mode at 192.1 cm−1 decreased, likely from diminished dipole moment changes. In contrast, the low-frequency modes, such as E″ at 36.8 cm−1, demonstrated insensitivity to strain, implying a minimal impact on heavier atoms within these modes. Overall, this study highlights the sensitivity of vibrational modes to strain-induced changes, providing valuable insights into the behavior of monolayer InSe under mechanical stress.
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