无铅 Cs2PtI6 包晶石太阳能电池的效率提升与优化

Anupam Srivastava, A. V. Ullas, Nirmal Roy
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摘要

过氧化物太阳能电池(PSCs)因其具有生产高效、灵活和低成本太阳能的潜力而闻名于世。本研究探讨了使用 Cs2PtI6 作为光吸收层和 NiO 作为空穴传输层 (HTL) 制作环保型无铅无机太阳能电池的可能性。研究仔细优化了各种因素,包括吸收层的厚度、掺杂浓度、缺陷密度和辐射重组的影响,以及不同的空穴和电子传输层。研究还考察了器件内部的界面缺陷和电阻。HTL 与吸收层之间界面的缺陷密度是影响器件性能的关键因素。此外,研究还评估了不同的金属背触点、温度变化、光强和光谱。优化结构(FTO/ZnO/Cs2PtI6/NiO/Au)的开路电压(VOC)达到 1.34 V,短路电流(JSC)达到 32.34 mA/cm2,填充因子(FF)达到 75.70 %,功率转换效率(PCE)达到 32.70 %,显示出太阳能电池技术的巨大前景。
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Efficiency Enhancement and Optimization of Lead-free Cs2PtI6 Perovskite Solar Cell
Perovskite solar cells (PSCs) are famous for their potential to produce efficient, flexible, and low-cost solar energy. This study explores the possibility of eco-friendly, lead-free, inorganic solar cells using Cs2PtI6 as the light-absorbing layer and NiO as the hole transport layer (HTL). It carefully optimizes various factors, including the thickness, doping concentration, defect density, and the effects of radiative recombination of the absorber layer, along with different hole and electron transport layers. The study also examines interfacial defects and resistances within the device. The density of defects at the interface between the HTL and the absorber layer is a crucial factor influencing the device's performance. Additionally, the study evaluates different metal back contacts, changes in temperature, light intensity, and the spectrum of light. The optimized structure (FTO/ZnO/Cs2PtI6/NiO/Au) achieves an open circuit voltage (VOC) of 1.34 V, a short-circuit current (JSC) of 32.34 mA/cm2, a fill factor (FF) of 75.70 %, and an excellent power conversion efficiency (PCE) of 32.70 %, showing great promise in solar cell technology.
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