Rf/analog and linearity performance of field-plate engineered AlN/ $$\beta$$ -Ga2O3 MOSHEMT for high power and microwave applications

This work introduces a novel AlN/\(\beta\)-Ga₂O₃ MOSHEMT design incorporating a field plate for enhanced power switching applications. The study investigates the impact of varying field plate length (L_FP) on key device parameters through extensive analysis paving the way for optimized device design. The AlN/\(\beta\)-Ga₂O₃ combination, facilitated by the high bandgap of \(\beta\)-Ga₂O₃ and the formation of a significant two-dimensional electron gas, n_s = 10¹³ cm^-2 at the AlN interface, leads to exceptional DC and RF performance. Key findings reveal a peak breakdown voltage of 175 V for a 400 nm field plate, highlighting its suitability for high-voltage applications. The output power exhibits a clear L_FP dependence, ranging from 10.5 kW at 100 nm to 18.1 kW at 400 nm, showcasing the device’s potential for high-power operation. Additionally, the on-state drain current (I_ON) remains stable across varying L_FP. Technology Computer Aided Design (TCAD) simulations demonstrate effective electric field management with the 400 nm field plate reaching a peak of 8.58 MV/cm and decreasing significantly with shorter L_FP. Furthermore, detailed analysis explores the device’s linearity performance. This includes transconductance, its higher-order derivatives, and crucial linearity figures-of-merit (FOMs) like VIP2, VIP3, IIP3, and IMD3. Distortion parameters (HD2 and HD3) also reveal an improved dynamic range and reduced intermodulation interference. These promising results establish the proposed AlN/\(\beta\)-Ga₂O₃ MOSHEMT with a field plate as a compelling candidate for power switching applications demanding high breakdown voltage, significant output power, and exceptional linearity.