Layer-polarized anomalous Hall effect in the MnBi2Te4/In2Se3 (In2Te3) heterostructures

The layer-polarized anomalous Hall effect has emerged as a novel phenomenon in the field of condensed matter physics, holding significant promise for future applications in designing low-dissipation devices. Currently, the layer-polarized anomalous Hall effect has been theoretically predicted or experimentally demonstrated through the application of external electric fields or the utilization of sliding ferroelectricity in diverse systems. Here, through first-principles calculations, we propose a pathway to realize the layer-polarized anomalous Hall effect by constructing A-type antiferromagnetic topological insulator MnBi${}_2$Te${}_4$ based heterostructures with ferroelectric materials In${}_2$Se${}_3$/In${}_2$Te${}_3$. Our results firstly show that the sizeable band splitting (larger than 20 meV) appears in the antiferromagnetic 4 septuple layers MnBi${}_2$Te${}_4$/In${}_2$Se${}_3$ system due to broken inversion symmetry. Further calculations approve that the layer-polarized anomalous Hall conductivity with reversal signs can be observed in the antiferromagnetic 4 septuple layers MnBi${}_2$Te${}_4$/In${}_2$Se${}_3$ (In${}_2$Te${}_3$) systems by shifting the Fermi energy level. Additionally, it is also found that ferrimagnetic 4 septuple layers MnBi${}_2$Te${}_4$/In${}_2$Se${}_3$ (In${}_2$Te${}_3$) can be realized by controlling the direction of ferroelectric polarization of ferroelectric materials. Thus, the resulting layer-polarized anomalous Hall effect may be switchable in our suggested systems. This work provides feasible systems for the further experimental realization of the layer-polarized anomalous Hall effect.