Seungju Han, Taehwan Kim, Changhee Kim, Sangmin Lee
{"title":"利用硅纳米线的光学特性设计和模拟带开关电容器的人工视网膜刺激集成电路。","authors":"Seungju Han, Taehwan Kim, Changhee Kim, Sangmin Lee","doi":"10.1177/00368504241275372","DOIUrl":null,"url":null,"abstract":"<p><p>This study introduces an approach for converting the current from a sensor into controllable voltage. To this end, a switched-capacitor structure was integrated to provide efficient current-to-voltage conversion. The generated voltage was further regulated by an operational amplifier current source, enhancing stability and precision. An n-type metal oxide semiconductor field-effect transistor structure under an H-bridge was integrated into the system to achieve fine-tuned control over current stimulation. This component contributed to voltage regulation and enabled bi-directional control of current flow, offering versatility in adjusting current amplitudes using working and counter electrodes. This dynamic control mechanism was pivotal for effectively controlling the intensity of current stimulation. We applied Verilog-A modeling to simulate the optical characteristics of Si nanowires. The proposed system efficiently converted sensor-derived current into voltage using a switched-capacitor structure. Simultaneously, the precision was enhanced via operational amplifier regulation and n-type metal-oxide-semiconductor field-effect transistor-based H-bridge control. The simulation showed a current stimulus amplitude ranging from 2 to 13 μA for a variable photocurrent of Si nanowires (Rex: 10 kΩ, pulse: 100 Hz, 1 ms). The ability to finely control current stimulation intensity holds promise for diverse applications requiring accurate and adjustable current manipulation. This study contributes to the growing field of sensor technology by offering a unique perspective on the integration of nanostructures and electronic components for an enhanced control and functionality.</p>","PeriodicalId":56061,"journal":{"name":"Science Progress","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11375642/pdf/","citationCount":"0","resultStr":"{\"title\":\"Design and simulation of artificial retinal stimulation IC with switched capacitor using Si nanowire optical properties.\",\"authors\":\"Seungju Han, Taehwan Kim, Changhee Kim, Sangmin Lee\",\"doi\":\"10.1177/00368504241275372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>This study introduces an approach for converting the current from a sensor into controllable voltage. To this end, a switched-capacitor structure was integrated to provide efficient current-to-voltage conversion. The generated voltage was further regulated by an operational amplifier current source, enhancing stability and precision. An n-type metal oxide semiconductor field-effect transistor structure under an H-bridge was integrated into the system to achieve fine-tuned control over current stimulation. This component contributed to voltage regulation and enabled bi-directional control of current flow, offering versatility in adjusting current amplitudes using working and counter electrodes. This dynamic control mechanism was pivotal for effectively controlling the intensity of current stimulation. We applied Verilog-A modeling to simulate the optical characteristics of Si nanowires. The proposed system efficiently converted sensor-derived current into voltage using a switched-capacitor structure. Simultaneously, the precision was enhanced via operational amplifier regulation and n-type metal-oxide-semiconductor field-effect transistor-based H-bridge control. The simulation showed a current stimulus amplitude ranging from 2 to 13 μA for a variable photocurrent of Si nanowires (Rex: 10 kΩ, pulse: 100 Hz, 1 ms). The ability to finely control current stimulation intensity holds promise for diverse applications requiring accurate and adjustable current manipulation. This study contributes to the growing field of sensor technology by offering a unique perspective on the integration of nanostructures and electronic components for an enhanced control and functionality.</p>\",\"PeriodicalId\":56061,\"journal\":{\"name\":\"Science Progress\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11375642/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science Progress\",\"FirstCategoryId\":\"103\",\"ListUrlMain\":\"https://doi.org/10.1177/00368504241275372\",\"RegionNum\":4,\"RegionCategory\":\"综合性期刊\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science Progress","FirstCategoryId":"103","ListUrlMain":"https://doi.org/10.1177/00368504241275372","RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
摘要
本研究介绍了一种将传感器电流转换为可控电压的方法。为此,集成了一个开关电容器结构,以提供高效的电流-电压转换。产生的电压由运算放大器电流源进一步调节,从而提高了稳定性和精确度。系统中还集成了一个 H 桥下的 n 型金属氧化物半导体场效应晶体管结构,以实现对电流刺激的微调控制。该元件有助于电压调节,实现了对电流的双向控制,为使用工作电极和对电极调节电流幅度提供了多功能性。这种动态控制机制对于有效控制电流刺激强度至关重要。我们应用 Verilog-A 建模来模拟硅纳米线的光学特性。所提出的系统利用开关电容器结构有效地将传感器获得的电流转换为电压。同时,通过运算放大器调节和基于 n 型金属氧化物半导体场效应晶体管的 H 桥控制提高了精度。模拟结果表明,对于硅纳米线的可变光电流(雷克斯:10 kΩ,脉冲:100 Hz,1 ms),电流刺激幅度从 2 μA 到 13 μA。精细控制电流刺激强度的能力为需要精确和可调电流操作的各种应用带来了希望。这项研究为纳米结构与电子元件的集成提供了一个独特的视角,以增强控制和功能,从而为不断发展的传感器技术领域做出了贡献。
Design and simulation of artificial retinal stimulation IC with switched capacitor using Si nanowire optical properties.
This study introduces an approach for converting the current from a sensor into controllable voltage. To this end, a switched-capacitor structure was integrated to provide efficient current-to-voltage conversion. The generated voltage was further regulated by an operational amplifier current source, enhancing stability and precision. An n-type metal oxide semiconductor field-effect transistor structure under an H-bridge was integrated into the system to achieve fine-tuned control over current stimulation. This component contributed to voltage regulation and enabled bi-directional control of current flow, offering versatility in adjusting current amplitudes using working and counter electrodes. This dynamic control mechanism was pivotal for effectively controlling the intensity of current stimulation. We applied Verilog-A modeling to simulate the optical characteristics of Si nanowires. The proposed system efficiently converted sensor-derived current into voltage using a switched-capacitor structure. Simultaneously, the precision was enhanced via operational amplifier regulation and n-type metal-oxide-semiconductor field-effect transistor-based H-bridge control. The simulation showed a current stimulus amplitude ranging from 2 to 13 μA for a variable photocurrent of Si nanowires (Rex: 10 kΩ, pulse: 100 Hz, 1 ms). The ability to finely control current stimulation intensity holds promise for diverse applications requiring accurate and adjustable current manipulation. This study contributes to the growing field of sensor technology by offering a unique perspective on the integration of nanostructures and electronic components for an enhanced control and functionality.
期刊介绍:
Science Progress has for over 100 years been a highly regarded review publication in science, technology and medicine. Its objective is to excite the readers'' interest in areas with which they may not be fully familiar but which could facilitate their interest, or even activity, in a cognate field.