电信波段多波长垂直发射量子阱纳米线激光阵列。

IF 19.4 1区 物理与天体物理 Q1 Physics and Astronomy Light, science & applications Pub Date : 2024-09-04 DOI:10.1038/s41377-024-01570-7
Xutao Zhang, Fanlu Zhang, Ruixuan Yi, Naiyin Wang, Zhicheng Su, Mingwen Zhang, Bijun Zhao, Ziyuan Li, Jiangtao Qu, Julie M Cairney, Yuerui Lu, Jianlin Zhao, Xuetao Gan, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
{"title":"电信波段多波长垂直发射量子阱纳米线激光阵列。","authors":"Xutao Zhang, Fanlu Zhang, Ruixuan Yi, Naiyin Wang, Zhicheng Su, Mingwen Zhang, Bijun Zhao, Ziyuan Li, Jiangtao Qu, Julie M Cairney, Yuerui Lu, Jianlin Zhao, Xuetao Gan, Hark Hoe Tan, Chennupati Jagadish, Lan Fu","doi":"10.1038/s41377-024-01570-7","DOIUrl":null,"url":null,"abstract":"<p><p>Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO<sub>2</sub> mask interface, stimulated emissions of the EH<sub>11a/b</sub> mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm<sup>-2</sup> per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.</p>","PeriodicalId":18093,"journal":{"name":"Light, science & applications","volume":null,"pages":null},"PeriodicalIF":19.4000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11372134/pdf/","citationCount":"0","resultStr":"{\"title\":\"Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays.\",\"authors\":\"Xutao Zhang, Fanlu Zhang, Ruixuan Yi, Naiyin Wang, Zhicheng Su, Mingwen Zhang, Bijun Zhao, Ziyuan Li, Jiangtao Qu, Julie M Cairney, Yuerui Lu, Jianlin Zhao, Xuetao Gan, Hark Hoe Tan, Chennupati Jagadish, Lan Fu\",\"doi\":\"10.1038/s41377-024-01570-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO<sub>2</sub> mask interface, stimulated emissions of the EH<sub>11a/b</sub> mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm<sup>-2</sup> per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.</p>\",\"PeriodicalId\":18093,\"journal\":{\"name\":\"Light, science & applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":19.4000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11372134/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Light, science & applications\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1038/s41377-024-01570-7\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Physics and Astronomy\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Light, science & applications","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1038/s41377-024-01570-7","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Physics and Astronomy","Score":null,"Total":0}
引用次数: 0

摘要

高度集成的光电子和光子系统是下一代先进光通信和量子通信技术发展的基础,这些技术需要电信波段的紧凑型多波长激光源。在此,我们报告了通过选择性区域外延在 InP 衬底上生长的有序 InGaAs/InP 多量子阱核壳纳米线阵列的衬底垂直发射激光。为了降低光损耗和定制腔模式,我们开发了一种新的纳米线刻面工程方法,以实现具有均匀形态和高晶体质量的可控量子阱纳米线尺寸。由于 InGaAs 量子阱具有很强的量子约束效应,并且在顶部纳米线刻面和底部纳米线/二氧化硅掩膜界面之间成功形成了垂直法布里-佩罗腔,因此在基底上的纳米线阵列中,单根垂直纳米线的 EH11a/b 模式受激发射得到了证实,其激光阈值为 ~28.通过微调量子阱的 In 成分,在垂直方向上实现了室温单模激光,其光谱范围从 940 纳米到电信 O 波段和 C 波段。我们的研究表明,通过精心设计的刻面工程策略,可以实现高度有序、均匀、尺寸控制精确的纳米线阵列,从而在同一基底上同时提供数千个多波长的纳米激光器,为未来的先进光电和光子系统铺平了一条前景广阔、可扩展的道路。
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Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays.

Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO2 mask interface, stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm-2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.

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来源期刊
CiteScore
27.00
自引率
2.60%
发文量
331
审稿时长
20 weeks
期刊介绍: Light: Science & Applications is an open-access, fully peer-reviewed publication.It publishes high-quality optics and photonics research globally, covering fundamental research and important issues in engineering and applied sciences related to optics and photonics.
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