碳化硅纳米管机械化学的混合密度泛函研究

Aabiskar Bhusal, Kapil Adhikari and Qian Sun
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摘要

约束几何模拟外力(CoGEF)方法模拟了分子受到的外力作用。在此,我们在混合密度泛函理论水平上使用 CoGEF 方法研究了碳化硅纳米管(SiCNTs)在纵向应力作用下的行为。当碳化硅纳米管受到纵向应力时,我们观察到结合能和前沿轨道间隙随着施加应变逐渐减小,直到达到临界阈值。超过临界值后,这两个参数会突然增加,表明形成了某种稳定的结构。较大 SiCNT 的结合能较高,因此在应变下更不易断裂,这表明它们的机械强度有所提高。此外,我们还观察到 SiCNT 的杨氏模量在初始阶段迅速增大,并随着直径的进一步增大而趋于恒定。因此,CoGEF 分析为了解 SiCNT 受力时结构和电子特性的变化提供了宝贵的见解。
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A hybrid density functional study on the mechanochemistry of silicon carbide nanotubes

The constrained geometries simulate the external force (CoGEF) method mimics the application of external stress on molecules. Herein, we used the CoGEF method at the hybrid density functional theory level to investigate the behavior of silicon carbide nanotubes (SiCNTs) under longitudinal stress. When the SiCNTs are under longitudinal stress, we observe a gradual decrease in the binding energy and the frontier orbital gap with the applied strain until a critical threshold is reached. Beyond this threshold, a sudden increase in both parameters occurs, indicating the formation of some kind of stable structure. The higher binding energy of the larger SiCNTs makes them more resistant to rupture under strain, suggesting their increased mechanical strength. Additionally, we observed a rapid initial increase of Young's modulus of SiCNTs and convergence to a constant magnitude with further increase in their diameter. Therefore, CoGEF analysis provides invaluable insights into the changes occurring in the structural and electronic properties of SiCNTs when subjected to stress.

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