WSe2/CrSBr 异质结构中的固有局域激子产生的高偏振单光子发射器

Varghese Alapatt, Francisco Marques-Moros, Carla Boix-Constant, Samuel Manas-Valero, Kirill Bolotin, Josep Canet-Ferrer, Eugenio Coronado
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摘要

单光子发射器(SPEs)是量子信息应用中的关键元件,通常通过非均质应变工程在二维材料中产生。在此,我们报告了一种涉及二维半导体/二维磁体异质结构的替代方法。对 WSe2/CrSBr 异质结构的光学研究发现,与 WSe2 的特征发射相比,有几条新的发射线能量较低,属于局域激子。进一步的研究表明,这些新出现的发射线中有一条是 SPE,具有很强的谷极化响应,并与 CrSBr 中场诱导的元磁转变有很大的能量偏移,这与相邻 CrSBr 层的磁接近效应有关。与之前关于 WSe2 的报道(这些报道只允许通过平面外磁场来调整 SPEs)不同,我们的发射器对平面内和平面外磁场都很敏感。我们的发现证明了这种方法在改善二维材料中 SPE 的控制和极化方面的潜力。
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Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure
Single photons emitters (SPEs) are key components in quantum information applications and are commonly generated in 2D materials by inhomogeneous strain engineering. Here, we report an alternative approach that involves a 2D semiconductor/2D magnet heterostructure. The optical study of the WSe2/CrSBr heterostructures reveals several new emission lines at lower energies compared to characteristic WSe2 emissions, that are assigned to localized excitons. Further investigation demonstrates that one of these emergent lines is an SPE with a strong valley polarization response and large energy shift with the field-induced metamagnetic transition in CrSBr, linking it to the magnetic proximity effect of the adjacent CrSBr layer. In contrast to previous reports on WSe2 that only allow tuning of the SPEs by out-of-plane magnetic field, our emitter is sensitive to both in- and out-of-plane fields. Our findings demonstrate the potential of this approach for improved control and polarization of SPEs in 2D materials.
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