{"title":"反应离子蚀刻在 4H-SiC 表面附近产生的电子和空穴陷阱的深度剖面图","authors":"Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto","doi":"10.1063/5.0221700","DOIUrl":null,"url":null,"abstract":"Deep levels in the whole bandgap of 4H-SiC generated by reactive ion etching (RIE) are investigated with both n- and p-type SiC Schottky barrier diodes by deep-level transient spectroscopy (DLTS). Depth profiles of the observed deep levels were analyzed using the DLTS peak intensities at various bias voltages and numerical calculations. The major electron traps detected after RIE and subsequent annealing at 1300 °C include the Z1/2 (EC−0.66 eV), ON1 (EC−0.88 eV), ON2 (EC−0.95 eV), and EH6/7 (EC−1.50 eV) centers, and the major hole traps include the UK1 (EV+0.51 eV), UK2 (EV+0.72 eV), HK0 (EV+0.77 eV), HK2 (EV+0.79 eV), and HK3 (EV+1.31 eV) centers, where EC and EV denote the conduction and valence band edges, respectively. Most of the traps were localized near the surface (<0.5 μm) with a maximum density of about 1×1015 cm−3, but several traps such as the ON1 and HK0 centers penetrate deep into the bulk region (>2 μm). By annealing at 1400 °C, most of the hole traps were eliminated, but several electron traps remained. From these results, the origins of these defects are discussed.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"43 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC\",\"authors\":\"Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto\",\"doi\":\"10.1063/5.0221700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deep levels in the whole bandgap of 4H-SiC generated by reactive ion etching (RIE) are investigated with both n- and p-type SiC Schottky barrier diodes by deep-level transient spectroscopy (DLTS). Depth profiles of the observed deep levels were analyzed using the DLTS peak intensities at various bias voltages and numerical calculations. The major electron traps detected after RIE and subsequent annealing at 1300 °C include the Z1/2 (EC−0.66 eV), ON1 (EC−0.88 eV), ON2 (EC−0.95 eV), and EH6/7 (EC−1.50 eV) centers, and the major hole traps include the UK1 (EV+0.51 eV), UK2 (EV+0.72 eV), HK0 (EV+0.77 eV), HK2 (EV+0.79 eV), and HK3 (EV+1.31 eV) centers, where EC and EV denote the conduction and valence band edges, respectively. Most of the traps were localized near the surface (<0.5 μm) with a maximum density of about 1×1015 cm−3, but several traps such as the ON1 and HK0 centers penetrate deep into the bulk region (>2 μm). By annealing at 1400 °C, most of the hole traps were eliminated, but several electron traps remained. From these results, the origins of these defects are discussed.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":\"43 1\",\"pages\":\"\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0221700\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0221700","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
通过深电平瞬态光谱 (DLTS),研究了反应离子蚀刻 (RIE) 在 n 型和 p 型 SiC 肖特基势垒二极管中产生的 4H-SiC 全带隙深电平。利用不同偏置电压下的 DLTS 峰强度和数值计算分析了观察到的深电平深度剖面。经过 RIE 和 1300 °C 退火后检测到的主要电子陷阱包括 Z1/2(EC-0.66 eV)、ON1(EC-0.88 eV)、ON2(EC-0.95 eV)和 EH6/7(EC-1.50 eV)中心,而主要的空穴陷阱包括 UK1(EV+0.51 eV)、UK2(EV+0.72 eV)、HK0(EV+0.77 eV)、HK2(EV+0.79 eV)和 HK3(EV+1.31 eV)中心,其中 EC 和 EV 分别表示导带和价带边缘。大多数陷阱都集中在表面附近(<0.5 μm),最大密度约为 1×1015 cm-3,但也有几个陷阱,如 ON1 和 HK0 中心,深入到体层区域(>2 μm)。在 1400 °C 退火后,大部分空穴陷阱被消除,但仍有几个电子陷阱存在。根据这些结果,我们讨论了这些缺陷的起源。
Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC
Deep levels in the whole bandgap of 4H-SiC generated by reactive ion etching (RIE) are investigated with both n- and p-type SiC Schottky barrier diodes by deep-level transient spectroscopy (DLTS). Depth profiles of the observed deep levels were analyzed using the DLTS peak intensities at various bias voltages and numerical calculations. The major electron traps detected after RIE and subsequent annealing at 1300 °C include the Z1/2 (EC−0.66 eV), ON1 (EC−0.88 eV), ON2 (EC−0.95 eV), and EH6/7 (EC−1.50 eV) centers, and the major hole traps include the UK1 (EV+0.51 eV), UK2 (EV+0.72 eV), HK0 (EV+0.77 eV), HK2 (EV+0.79 eV), and HK3 (EV+1.31 eV) centers, where EC and EV denote the conduction and valence band edges, respectively. Most of the traps were localized near the surface (<0.5 μm) with a maximum density of about 1×1015 cm−3, but several traps such as the ON1 and HK0 centers penetrate deep into the bulk region (>2 μm). By annealing at 1400 °C, most of the hole traps were eliminated, but several electron traps remained. From these results, the origins of these defects are discussed.
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