L. Venkidu, N. Raja, Vasundharadevi Venkidu, B. Sundarakannan
{"title":"通过 Ba(Fe1/2Nb1/2)O3 取代调谐带隙并控制 BiFeO3 中的氧空位,增强 Al/BFO-BFN/Ag 太阳能电池中的体铁电性光电响应","authors":"L. Venkidu, N. Raja, Vasundharadevi Venkidu, B. Sundarakannan","doi":"10.1063/5.0219513","DOIUrl":null,"url":null,"abstract":"The generation of above-bandgap photovoltage, referred to as the anomalous photovoltaic effect (APV), is an extraordinary characteristic sought after property in bulk ferroelectric photovoltaic devices. Despite the fact that the relatively narrow bandgap of BiFeO3 (BFO) (2.7 eV) induces a comparatively larger generation of photocurrent than other ferroelectric photovoltaic, it falls short in producing an anomalous photovoltage (Eg ≪ Voc) and exhibits leaky ferroelectric hysteresis due to unavoidable oxygen vacancies. This work revealed a reduction in oxygen vacancies through the substitution of Ba(Fe1/2Nb1/2)O3 in BFO, leading to improved structural, morphological, synchrotron XPS, and electrical properties. This reduction in oxygen vacancies has resulted in an impressive above-bandgap photovoltage (APV) of 4.41 V for 80BFO–20BFN with greater ferroelectric polarization (Pr = 20.45 μC/cm2) observed at the co-existence of polar and non-polar phases. Moreover, both theoretical and experimental optical analyses have demonstrated a significant decrease in the bandgap to 1.92 eV, effectively extending the visible region close to 653 nm. As a result, a larger population of photoexcited charge carriers is generated, enabling the attainment of a high current density (Jsc) of 0.75 μA/cm2 under 100 mW/cm2 light irradiation.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tuning bandgap and controlling oxygen vacancy in BiFeO3 via Ba(Fe1/2Nb1/2)O3 substitution for enhanced bulk ferroelectric photovoltaic response in Al/BFO–BFN/Ag solar cell\",\"authors\":\"L. Venkidu, N. Raja, Vasundharadevi Venkidu, B. Sundarakannan\",\"doi\":\"10.1063/5.0219513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The generation of above-bandgap photovoltage, referred to as the anomalous photovoltaic effect (APV), is an extraordinary characteristic sought after property in bulk ferroelectric photovoltaic devices. Despite the fact that the relatively narrow bandgap of BiFeO3 (BFO) (2.7 eV) induces a comparatively larger generation of photocurrent than other ferroelectric photovoltaic, it falls short in producing an anomalous photovoltage (Eg ≪ Voc) and exhibits leaky ferroelectric hysteresis due to unavoidable oxygen vacancies. This work revealed a reduction in oxygen vacancies through the substitution of Ba(Fe1/2Nb1/2)O3 in BFO, leading to improved structural, morphological, synchrotron XPS, and electrical properties. This reduction in oxygen vacancies has resulted in an impressive above-bandgap photovoltage (APV) of 4.41 V for 80BFO–20BFN with greater ferroelectric polarization (Pr = 20.45 μC/cm2) observed at the co-existence of polar and non-polar phases. Moreover, both theoretical and experimental optical analyses have demonstrated a significant decrease in the bandgap to 1.92 eV, effectively extending the visible region close to 653 nm. As a result, a larger population of photoexcited charge carriers is generated, enabling the attainment of a high current density (Jsc) of 0.75 μA/cm2 under 100 mW/cm2 light irradiation.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0219513\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0219513","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Tuning bandgap and controlling oxygen vacancy in BiFeO3 via Ba(Fe1/2Nb1/2)O3 substitution for enhanced bulk ferroelectric photovoltaic response in Al/BFO–BFN/Ag solar cell
The generation of above-bandgap photovoltage, referred to as the anomalous photovoltaic effect (APV), is an extraordinary characteristic sought after property in bulk ferroelectric photovoltaic devices. Despite the fact that the relatively narrow bandgap of BiFeO3 (BFO) (2.7 eV) induces a comparatively larger generation of photocurrent than other ferroelectric photovoltaic, it falls short in producing an anomalous photovoltage (Eg ≪ Voc) and exhibits leaky ferroelectric hysteresis due to unavoidable oxygen vacancies. This work revealed a reduction in oxygen vacancies through the substitution of Ba(Fe1/2Nb1/2)O3 in BFO, leading to improved structural, morphological, synchrotron XPS, and electrical properties. This reduction in oxygen vacancies has resulted in an impressive above-bandgap photovoltage (APV) of 4.41 V for 80BFO–20BFN with greater ferroelectric polarization (Pr = 20.45 μC/cm2) observed at the co-existence of polar and non-polar phases. Moreover, both theoretical and experimental optical analyses have demonstrated a significant decrease in the bandgap to 1.92 eV, effectively extending the visible region close to 653 nm. As a result, a larger population of photoexcited charge carriers is generated, enabling the attainment of a high current density (Jsc) of 0.75 μA/cm2 under 100 mW/cm2 light irradiation.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces