Yu P Korneeva, M A Dryazgov, N V Porokhov, N N Osipov, M I Krasilnikov, A A Korneev, M A Tarkhov
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引用次数: 0
摘要
我们介绍了一项关于在低温下工作的氮化铌电子薄膜钼电阻器的研究。关键步骤是在钼沉积之前对铌镍进行 0.5-1.5 keV 的离子清洗活化，从而获得高质量的钼/铌镍界面。透射电子显微镜和 X 射线反射仪证实了界面的质量。
Molybdenum low-resistance thin-film resistors for cryogenic devices
We present a study of thin-film Mo resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5–1.5 keV ion cleaning–activation of NbN before Mo deposition, which allows us to obtain a high-quality Mo/NbN interface. This, together with an additional Al bandage layer in the area of the contact pads, allows us to reduce the contact resistance below 1 Ω. The quality of the interfaces is confirmed by transmission electron microscopy and x-ray reflectometry.
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