{"title":"用于 NH3 传感和存储的 Sc 和 Ti- 掺杂碳化硅纳米管:一种 DFT 方法","authors":"Banchob Wanno, Thanawat Somtua, Anucha Naowanit, Narin Panya, Wandee Rakrai, Chatthai Kaewtong, Chanukorn Tabtimsai","doi":"10.1140/epjb/s10051-024-00763-8","DOIUrl":null,"url":null,"abstract":"<div><p>Ammonia (NH<sub>3</sub>) is highly hazardous gases, thus the investigation for a highly sensitive sensor of NH<sub>3</sub> molecule is desirable. The adsorptions of NH<sub>3</sub> molecule on Sc and Ti atoms doped silicon carbide nanotube (SiCNT) were investigated by using density functional theory calculation. The adsorption energies, adsorption distances, energy gaps, chemical hardness and softness, orbital distributions, charge transfers and density of states were examined. The calculated results display that NH<sub>3</sub> molecules can be adsorbed on the pristine SiCNT via a weak physical interaction, which is much weaker than those of NH<sub>3</sub> adsorption on Sc and Ti-doped SiCNTs. All of Sc and Ti-doped SiCNTs can absorb single and multiple NH<sub>3</sub> molecules with the greatest adsorption energy of − 41.56 kcal/mol for NH<sub>3</sub>/Ti<sub>Si</sub>–SiCNT system. In addition, there are shorter adsorption distance and larger charge transfer for Sc- and Ti-doped SiCNTs than that of pristine SiCNT with NH<sub>3</sub> molecule. The orbital distributions are occurred around the doping site may be due to the strong interaction between NH<sub>3</sub> and SiCNT. The energy gaps of Sc- and Ti-doped SiCNTs have much more significant change than that of pristine SiCNT in which 2NH<sub>3</sub>/Ti<sub>C</sub>–SiCNT show the largest change of energy gap about 22% compared with bare Ti<sub>C</sub>–SiCNT. The density of states of Sc- and Ti-doped SiCNTs show significant shift than that of pristine SiCNT which the new impurity states near the − 2.5 eV is occurred. The chemical hardness and softness illustrate the enhancement stability and decreased the reactivity. A short recovery times and suitable desorption temperatures are observed for the NH<sub>3</sub> desorption on Sc- and Ti-doped SiCNT surface. Therefore, sensitivity to NH<sub>3</sub> molecule of Sc- and Ti-doped SiCNTs is a promising candidate for highly sensitive gas sensing and storage nanomaterials.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sc- and Ti-doped silicon carbide nanotubes for NH3 sensing and storage applications: a DFT approach\",\"authors\":\"Banchob Wanno, Thanawat Somtua, Anucha Naowanit, Narin Panya, Wandee Rakrai, Chatthai Kaewtong, Chanukorn Tabtimsai\",\"doi\":\"10.1140/epjb/s10051-024-00763-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Ammonia (NH<sub>3</sub>) is highly hazardous gases, thus the investigation for a highly sensitive sensor of NH<sub>3</sub> molecule is desirable. The adsorptions of NH<sub>3</sub> molecule on Sc and Ti atoms doped silicon carbide nanotube (SiCNT) were investigated by using density functional theory calculation. The adsorption energies, adsorption distances, energy gaps, chemical hardness and softness, orbital distributions, charge transfers and density of states were examined. The calculated results display that NH<sub>3</sub> molecules can be adsorbed on the pristine SiCNT via a weak physical interaction, which is much weaker than those of NH<sub>3</sub> adsorption on Sc and Ti-doped SiCNTs. All of Sc and Ti-doped SiCNTs can absorb single and multiple NH<sub>3</sub> molecules with the greatest adsorption energy of − 41.56 kcal/mol for NH<sub>3</sub>/Ti<sub>Si</sub>–SiCNT system. In addition, there are shorter adsorption distance and larger charge transfer for Sc- and Ti-doped SiCNTs than that of pristine SiCNT with NH<sub>3</sub> molecule. The orbital distributions are occurred around the doping site may be due to the strong interaction between NH<sub>3</sub> and SiCNT. The energy gaps of Sc- and Ti-doped SiCNTs have much more significant change than that of pristine SiCNT in which 2NH<sub>3</sub>/Ti<sub>C</sub>–SiCNT show the largest change of energy gap about 22% compared with bare Ti<sub>C</sub>–SiCNT. The density of states of Sc- and Ti-doped SiCNTs show significant shift than that of pristine SiCNT which the new impurity states near the − 2.5 eV is occurred. The chemical hardness and softness illustrate the enhancement stability and decreased the reactivity. A short recovery times and suitable desorption temperatures are observed for the NH<sub>3</sub> desorption on Sc- and Ti-doped SiCNT surface. Therefore, sensitivity to NH<sub>3</sub> molecule of Sc- and Ti-doped SiCNTs is a promising candidate for highly sensitive gas sensing and storage nanomaterials.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":787,\"journal\":{\"name\":\"The European Physical Journal B\",\"volume\":\"97 9\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The European Physical Journal B\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1140/epjb/s10051-024-00763-8\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal B","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1140/epjb/s10051-024-00763-8","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Sc- and Ti-doped silicon carbide nanotubes for NH3 sensing and storage applications: a DFT approach
Ammonia (NH3) is highly hazardous gases, thus the investigation for a highly sensitive sensor of NH3 molecule is desirable. The adsorptions of NH3 molecule on Sc and Ti atoms doped silicon carbide nanotube (SiCNT) were investigated by using density functional theory calculation. The adsorption energies, adsorption distances, energy gaps, chemical hardness and softness, orbital distributions, charge transfers and density of states were examined. The calculated results display that NH3 molecules can be adsorbed on the pristine SiCNT via a weak physical interaction, which is much weaker than those of NH3 adsorption on Sc and Ti-doped SiCNTs. All of Sc and Ti-doped SiCNTs can absorb single and multiple NH3 molecules with the greatest adsorption energy of − 41.56 kcal/mol for NH3/TiSi–SiCNT system. In addition, there are shorter adsorption distance and larger charge transfer for Sc- and Ti-doped SiCNTs than that of pristine SiCNT with NH3 molecule. The orbital distributions are occurred around the doping site may be due to the strong interaction between NH3 and SiCNT. The energy gaps of Sc- and Ti-doped SiCNTs have much more significant change than that of pristine SiCNT in which 2NH3/TiC–SiCNT show the largest change of energy gap about 22% compared with bare TiC–SiCNT. The density of states of Sc- and Ti-doped SiCNTs show significant shift than that of pristine SiCNT which the new impurity states near the − 2.5 eV is occurred. The chemical hardness and softness illustrate the enhancement stability and decreased the reactivity. A short recovery times and suitable desorption temperatures are observed for the NH3 desorption on Sc- and Ti-doped SiCNT surface. Therefore, sensitivity to NH3 molecule of Sc- and Ti-doped SiCNTs is a promising candidate for highly sensitive gas sensing and storage nanomaterials.