{"title":"石墨烯上单层二硫化锡的成核偏好和横向生长","authors":"Gaoxiang Lin, Huimin Gao, Yimei Fang, Chenyi Huang, Junjie Huang, Jie Lu, Xinrui Cao, Yufeng Zhang, Xueao Zhang, Shunqing Wu, Weiwei Cai, Yinghui Zhou","doi":"10.1039/d4tc03002h","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) heterostructures have attracted significant interest in recent years due to their novel physics and great potential in various applications. However, the achievement of controllable synthesis of large-scale 2D heterostructures remains a great challenge. Here, we demonstrate the successful van der Waals epitaxial growth of monolayer SnS<small><sub>2</sub></small> with nearly complete coverage on graphene by the method of chemical vapor deposition. The investigation reveals that the nucleation density of SnS<small><sub>2</sub></small> on graphene undergoes notable variations stemming from the presence of amorphous carbons. The lateral growth and morphology evolution of SnS<small><sub>2</sub></small> nuclei are illustrated by the theoretical studies on the adsorption and migration of precursors on graphene. On the basis of these results, an improved process is proposed to realize the uniform nucleation and high-coverage growth of SnS<small><sub>2</sub></small> monolayers. The findings offer profound insights into the growth mechanism of van der Waals epitaxy, holding significant implications for the practical utilization of two-dimensional heterostructures.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nucleation preference and lateral growth of monolayer tin disulfide on graphene\",\"authors\":\"Gaoxiang Lin, Huimin Gao, Yimei Fang, Chenyi Huang, Junjie Huang, Jie Lu, Xinrui Cao, Yufeng Zhang, Xueao Zhang, Shunqing Wu, Weiwei Cai, Yinghui Zhou\",\"doi\":\"10.1039/d4tc03002h\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-dimensional (2D) heterostructures have attracted significant interest in recent years due to their novel physics and great potential in various applications. However, the achievement of controllable synthesis of large-scale 2D heterostructures remains a great challenge. Here, we demonstrate the successful van der Waals epitaxial growth of monolayer SnS<small><sub>2</sub></small> with nearly complete coverage on graphene by the method of chemical vapor deposition. The investigation reveals that the nucleation density of SnS<small><sub>2</sub></small> on graphene undergoes notable variations stemming from the presence of amorphous carbons. The lateral growth and morphology evolution of SnS<small><sub>2</sub></small> nuclei are illustrated by the theoretical studies on the adsorption and migration of precursors on graphene. On the basis of these results, an improved process is proposed to realize the uniform nucleation and high-coverage growth of SnS<small><sub>2</sub></small> monolayers. The findings offer profound insights into the growth mechanism of van der Waals epitaxy, holding significant implications for the practical utilization of two-dimensional heterostructures.\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://doi.org/10.1039/d4tc03002h\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1039/d4tc03002h","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Nucleation preference and lateral growth of monolayer tin disulfide on graphene
Two-dimensional (2D) heterostructures have attracted significant interest in recent years due to their novel physics and great potential in various applications. However, the achievement of controllable synthesis of large-scale 2D heterostructures remains a great challenge. Here, we demonstrate the successful van der Waals epitaxial growth of monolayer SnS2 with nearly complete coverage on graphene by the method of chemical vapor deposition. The investigation reveals that the nucleation density of SnS2 on graphene undergoes notable variations stemming from the presence of amorphous carbons. The lateral growth and morphology evolution of SnS2 nuclei are illustrated by the theoretical studies on the adsorption and migration of precursors on graphene. On the basis of these results, an improved process is proposed to realize the uniform nucleation and high-coverage growth of SnS2 monolayers. The findings offer profound insights into the growth mechanism of van der Waals epitaxy, holding significant implications for the practical utilization of two-dimensional heterostructures.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors