Haofeng Wei, Yanzhao Wu, Junwei Tong, Li Deng, Xiang Yin, Zhijun Zhang and Xianmin Zhang
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The intrinsic quantum anomalous Hall effect in TaPdXTe (X = S, Se) monolayers†
The search for high-performance intrinsic quantum anomalous Hall (QAH) insulators is crucial for the development of topological electronics. Here, based on density–functional theory calculations, TaPdSTe and TaPdSeTe monolayers are demonstrated to be intrinsic QAH insulators with topological band gaps of 88 and 79 meV, respectively. Both TaPdSTe and TaPdSeTe monolayers show an out-of-plane magnetic anisotropy with the Curie temperatures of 260 and 262 K by Monte Carlo simulations, respectively. The calculated Chern number C for both materials is −1. The analysis of the electronic structures reveals that the ferromagnetic topological property is caused by the energy band inversions of dxz and dyz orbitals of Ta atoms. Additionally, the effects of biaxial strain on the magnetic and topological properties are discussed for the current TaPdSTe and TaPdSeTe monolayers. During −3 to 3% biaxial strains, TaPdSTe and TaPdSeTe monolayers maintain the QAH effect, but their topological band gaps increase gradually from compressive to tensile strains. This study presents two intrinsic topological insulators that can help develop low-power electronic devices.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors