{"title":"刚玉结构掺锡氧化铟薄膜对伽马射线辐照的耐受性","authors":"Kazuki Shimazoe, Shunsuke Kurosawa, Hiroki Tanaka, Takushi Takata, Hiroyuki Nishinaka","doi":"10.1002/pssb.202400368","DOIUrl":null,"url":null,"abstract":"Corundum‐structured Sn‐doped indium oxide (rh‐ITO) is investigated as a novel transparent conductive oxide. Herein, its gamma‐ray tolerance up to a total dose of 77 kGy is examined for potential applications in harsh environments, such as space. The investigations are conducted on rh‐ITO with Sn concentrations of 0 and 5 at%. X‐ray diffraction 2θ‐ω scan analysis reveals that no phase separation occurs due to gamma‐ray irradiation. The carrier concentration in undoped rh‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> increases after irradiation, indicating that the gamma rays displace the oxygen atoms and form oxygen defects that generate donors. The high visible light transparency of rh‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and rh‐ITO is maintained after irradiation. This study demonstrates the high stability of rh‐ITO to gamma‐ray irradiation until 77 kGy dose. This work contributes to the application of rh‐ITO as an electrode in high‐radiation environments.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":"9 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tolerance of Corundum‐Structured Tin‐Doped Indium Oxide Thin Films to Gamma‐ray Irradiation\",\"authors\":\"Kazuki Shimazoe, Shunsuke Kurosawa, Hiroki Tanaka, Takushi Takata, Hiroyuki Nishinaka\",\"doi\":\"10.1002/pssb.202400368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Corundum‐structured Sn‐doped indium oxide (rh‐ITO) is investigated as a novel transparent conductive oxide. Herein, its gamma‐ray tolerance up to a total dose of 77 kGy is examined for potential applications in harsh environments, such as space. The investigations are conducted on rh‐ITO with Sn concentrations of 0 and 5 at%. X‐ray diffraction 2θ‐ω scan analysis reveals that no phase separation occurs due to gamma‐ray irradiation. The carrier concentration in undoped rh‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> increases after irradiation, indicating that the gamma rays displace the oxygen atoms and form oxygen defects that generate donors. The high visible light transparency of rh‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and rh‐ITO is maintained after irradiation. This study demonstrates the high stability of rh‐ITO to gamma‐ray irradiation until 77 kGy dose. This work contributes to the application of rh‐ITO as an electrode in high‐radiation environments.\",\"PeriodicalId\":20406,\"journal\":{\"name\":\"Physica Status Solidi B-basic Solid State Physics\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi B-basic Solid State Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/pssb.202400368\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssb.202400368","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Tolerance of Corundum‐Structured Tin‐Doped Indium Oxide Thin Films to Gamma‐ray Irradiation
Corundum‐structured Sn‐doped indium oxide (rh‐ITO) is investigated as a novel transparent conductive oxide. Herein, its gamma‐ray tolerance up to a total dose of 77 kGy is examined for potential applications in harsh environments, such as space. The investigations are conducted on rh‐ITO with Sn concentrations of 0 and 5 at%. X‐ray diffraction 2θ‐ω scan analysis reveals that no phase separation occurs due to gamma‐ray irradiation. The carrier concentration in undoped rh‐In2O3 increases after irradiation, indicating that the gamma rays displace the oxygen atoms and form oxygen defects that generate donors. The high visible light transparency of rh‐In2O3 and rh‐ITO is maintained after irradiation. This study demonstrates the high stability of rh‐ITO to gamma‐ray irradiation until 77 kGy dose. This work contributes to the application of rh‐ITO as an electrode in high‐radiation environments.
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physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
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