钛酸锶的三维固相外延结晶机制

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-08-26 DOI:10.1021/acs.cgd.4c0008110.1021/acs.cgd.4c00081
Tesia D. Janicki, Rui Liu, Soohyun Im, Zhongyi Wan, Serkan Butun, Shaoning Lu, Nasir Basit, Paul M. Voyles, Paul G. Evans and J. R. Schmidt*, 
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引用次数: 0

摘要

钛酸锶(SrTiO3,STO)是一种具有立方包晶晶体结构的复杂金属氧化物。由于其立方相晶体结构易于描述和理解,STO 是探索复杂氧化物固相外延(SPE)机理细节的理想模型系统。SPE 是一种结晶方法,旨在引导晶体在低同源温度下生长,以实现目标微结构。除了平面薄膜外,SPE 还可以利用在结晶路径上添加化学惰性、非结晶、无定形障碍物来生成复杂的三维结构。这种掩膜的引入从根本上改变了 SPE 工艺,在晶体/掩膜/非晶边界的影响下,诱导了从二维到三维几何形状的转变,以及从垂直到横向晶体生长的转变。结合分子动力学模拟和实验,我们发现了传统(无掩膜)和掩膜 SPE 中纳米级生长行为的几个独特现象。在研究 STO 的传统 SPE 时,我们发现界面处的结晶与结晶/非晶界面附近非晶 STO 区域的密度波动密切相关,并且可能受到密度波动的驱动,而密度波动与切面有很大关系。在掩膜情况下,我们发现晶体生长前沿在与掩膜接触附近变得非平面。我们还观察到横向结晶之前的最小垂直生长要求。这两种现象都取决于三相(晶体/掩膜/非晶体)体系的相对体积自由能和界面自由能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Mechanisms of Three-Dimensional Solid-Phase Epitaxial Crystallization of Strontium Titanate

Strontium titanate (SrTiO3, STO) is a complex metal oxide with a cubic perovskite crystal structure. Due to its easily described and understood crystal structure in the cubic phase, STO is an ideal model system for exploring the mechanistic details of solid-phase epitaxy (SPE) in complex oxides. SPE is a crystallization approach that aims to guide crystal growth at low homologous temperatures to achieve targeted microstructures. Beyond planar thin films, SPE can also exploit the addition of a chemically inert, noncrystallizing, amorphous obstacle in the path of crystallization to generate complex three-dimensional structures. The introduction of this mask fundamentally alters the SPE process, inducing a transition from two- to three-dimensional geometries and from vertical to lateral crystal growth under the influence of the crystal/mask/amorphous boundary. Using a combination of molecular dynamics simulations and experiments, we identify several unique phenomena in the nanoscale growth behaviors in both conventional (unmasked) and masked SPE. Examining conventional SPE of STO, we find that crystallization at the interface is strongly correlated to, and potentially driven by, density fluctuations in the region of the amorphous STO near the crystalline/amorphous interface with a strong facet dependence. In the masked case, we find that the crystalline growth front becomes nonplanar near contact with the mask. We also observe a minimum vertical growth requirement prior to lateral crystallization. Both phenomena depend on the relative bulk and interfacial free energies of the three-phase (crystal/mask/amorphous) system.

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4.30%
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