Xuan Sun, Jingen Wu, Yiwei Xu, Jieqiang Gao, Bomin Lin, Guannan Yang, Bingfeng Ge, Zhongqiang Hu, Ming Liu
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引用次数: 0
摘要
磁电(ME)复合材料具有灵敏度高、成本低、功耗低和体积小等优点,因此在开发高性能磁强计方面大有可为。在提高 ME 系数的同时降低背景噪声是提高 ME 传感器性能的有效方法,但这仍然具有挑战性。在这项工作中,我们提出了一种通过优化磁电石英/金属玻璃复合材料的电极设计和磁退火工艺来降低等效磁噪声的方法。与未优化的 ME 复合材料相比,ME 系数增加了 1.38 倍,而背景噪声降低了约 0.78 倍,从而使共振时的 LoD 达到 10 fT。由于 ME 系数高、本底噪声低,从 20 kHz 到 50 kHz 的等效磁噪声小于 6.10 pT/Hz1/2。结果表明,适当的退火处理有利于提高 Metglas 的软磁特性。同时,石英空心电极可以降低等效电容,提高压电层的品质因数。这项研究为提高 ME 磁场传感器的性能提供了一种可行的方法。
Reducing equivalent magnetic noise by electrode design and magnetic annealing in Quartz/Metglas magnetoelectric sensors
Magnetoelectric (ME) composites are promising for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. Enhancing the ME coefficient while reducing the background noise is an effective method to improve the performance of ME sensors, which remains challenging. In this work, we propose a method to reduce the equivalent magnetic noise by optimizing the electrode design and the magnetic annealing process in magnetoelectric quartz/Metglas composites. Compared with the non-optimized ME composites, the ME coefficient increases by 1.38 times while the background noise decreases by about 0.78 times, resulting in a LoD of 10 fT at resonance. Due to the high ME coefficient and low background noise, the equivalent magnetic noise from 20 kHz to 50 kHz was less than 6.10 pT/Hz1/2. The results show that proper annealing treatment of Metglas is beneficial for improving the soft magnetic properties. Meanwhile, the hollow electrode of quartz can reduce the equivalent capacitance and enhance the quality factor of the piezoelectric layer. This work demonstrates a feasible way to enhance the performance of ME magnetic field sensors.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...