Priyesh Kumar, Sudip Kumar Deb, Subhananda Chakrabarti, Jhuma Saha
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引用次数: 0
摘要
通过低温偏振拉曼散射，对双层应变耦合 InAs/GaAs_(1-x)Sb_x 量子二硬质结构中的光学声子模式（包括法向声子和界面（IF）声子）进行了实验研究。Sb含量对这些声子模式频率位置的影响与模拟应变有很好的相关性。随着封盖层中 Sb 含量的变化，异质结构中的拉曼峰出现了不同的频率偏移。这种偏移可归因于应变松弛、量子点变大以及 II 型带排列。
Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures
An experimental study of optical phonon modes, both normal and interface (IF)
phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot
heterostructures has been presented by means of low-temperature polarized Raman
scattering. The effect of Sb-content on the frequency positions of these phonon
modes has been very well correlated with the simulated strain. The Raman peaks
show different frequency shifts in the heterostructure with varying Sb-content
in the capping layer. This shift is attributed to the strain relaxation, bigger
size of quantum dots and type-II band alignment.
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