P. Casolaro, V. Izzo, G. Giusi, N. Wyrsch, A. Aloisio
{"title":"利用阻抗谱模拟正向偏置硅 pn 二极管的扩散和耗尽电容","authors":"P. Casolaro, V. Izzo, G. Giusi, N. Wyrsch, A. Aloisio","doi":"10.1063/5.0230008","DOIUrl":null,"url":null,"abstract":"We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"215 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling the diffusion and depletion capacitances of a silicon pn diode in forward bias with impedance spectroscopy\",\"authors\":\"P. Casolaro, V. Izzo, G. Giusi, N. Wyrsch, A. Aloisio\",\"doi\":\"10.1063/5.0230008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":\"215 1\",\"pages\":\"\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0230008\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0230008","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Modeling the diffusion and depletion capacitances of a silicon pn diode in forward bias with impedance spectroscopy
We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.
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