释放潜能:基于卤化物包晶的超宽带宽短波红外探测器在室温下的高响应率

JACS Au Pub Date : 2024-09-17 DOI:10.1021/jacsau.4c00621
Yuqin Qian, Zhi-Chao Huang-Fu, Hao Li, Tong Zhang, Xia Li, Sydney Schmidt, Haley Fisher, Jesse B. Brown, Avetik Harutyunyan, Hanning Chen, Gugang Chen, Yi Rao
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摘要

与光学成像系统相比,短波红外(SWIR)成像系统具有显著的优势,如更高的分辨率和对比度。然而,更广泛的应用要求提高性能,特别是消除低温要求和降低制造工艺成本。在本手稿中,我们利用金属卤化物包晶材料的潜力,介绍了 SWIR 光电探测的新进展。我们的工作介绍了一种具有成本效益且易于制造的 SWIR 光电探测器,其探测范围从 900 纳米到 2500 纳米,室温响应度为 1.57 × 102 A/W,在 1310 纳米波长处的比探测度为 4.18 × 1010 Jones。然后,我们在环境条件下进行了全面的静态和时间分辨光学和电学测量,并辅以大量的密度泛函理论模拟,验证了在本征 n 型和外征 p 型过氧化物结构中异质结的形成。我们基于包晶的 SWIR 材料的潜力已从光电探测器扩展到光伏电池,并为在室温和大气压下实现高 SWIR 响应率提供了可能性,从而提高了其经济效益。
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Unleashing the Potential: High Responsivity at Room Temperature of Halide Perovskite-Based Short-Wave Infrared Detectors with Ultrabroad Bandwidth
Short-wave infrared (SWIR) imaging systems offer remarkable advantages, such as enhanced resolution and contrast, compared to their optical counterparts. However, broader applications demand improvements in performance, notably the elimination of cryogenic temperature requirements and cost reduction in manufacturing processes. In this manuscript, we present a new development in SWIR photodetection, exploiting the potential of metal halide perovskite materials. Our work introduces a cost-effective and easily fabricated SWIR photodetector with an ultrabroad detection range from 900 to 2500 nm, a room-temperature responsivity of 1.57 × 102 A/W, and a specific detectivity of 4.18 × 1010 Jones at 1310 nm. We then performed comprehensive static and time-resolved optical and electrical measurements under ambient conditions, complemented by extensive density functional theory simulations, validating the formation of heterojunctions within the intrinsic n-type and extrinsic p-type perovskite structures. The potential of our perovskite-based SWIR materials extends from photodetectors to photovoltaic cells and introduces a possibility for high SWIR responsivity at room temperature and atmospheric pressure, which promotes its economic efficiency.
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