An epsilon-near-zero circuit based on half-mode SIW with enhanced integrability for applications of narrowband large group delay

The tunneling effect of an epsilon-near-zero (ENZ) is exploited to fulfill a narrowband large group delay by using a compact half-mode substrate integrated waveguide structure built on thin substrate. The ENZ channel possesses a finite input impedance at the tunneling frequency point, and the finite input impedance can be matched to the final I/O port simply by a quarter wavelength impedance transformer. Thus, the enhanced integrability is realized in a planar form in the proposed circuit comparing to the conventional waveguide ENZ channel. Meanwhile, in the real ENZ channel, the effective impedance is observed to be close to 50 Ω, so that the ENZ can be connected with 50 Ω microstrip directly, which has been experimentally validated. The final measured net group delay is 1.36 ns at 3.08 GHz with 3.6 dB insertion loss, and the proposed method provides an alternative for the group delay engineering.