手性扭曲三重双层石墨烯中的相关绝缘体和电荷密度波态

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摘要

受最近在啁啾扭曲三重双层石墨烯(CTTBG)的整数和半整数填充处观察到的位移场调谐相关绝缘体的实验结果[Phys.Rev.Lett.132.246501]的激励,我们研究了 CTTBG 的单粒子和相互作用物理。我们发现存在两种不等价的堆叠阶,即 AB-AB-BC 和 AB-AB-AB,并且两者都表现出具有非难拓扑的平坦带。然后,我们使用哈特里-福克近似法计算了 CTTBG 在两种堆叠阶的所有整数和半整数填充以及垂直位移场下的丰富相图。在小位移场下,AB-AB-BC 堆积阶的基态是风味极化态,而在所有整数和半整数填充下,AB-AB-AB 堆积阶的基态是间隔相干态。较大的位移场将使它们变成层极化态。在半整数填充时,基态也表现出电荷密度波(CDW)阶。对于 AB-AB-AB 堆叠,半整数填充时的基态在一系列位移场中总是 2 × 1 条纹态。对于 AB-AB-BC 堆叠,在小位移场下,半整数填充的基态也是 2 × 1 条纹态,而较大的位移则可能有利于进一步的平移对称性破缺,这取决于填充和位移场的方向。我们证明,实验中观察到的 CDW 状态可能源于平带电子的强库仑相互作用。
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Correlated insulators and charge density wave states in chirally twisted triple bilayer graphene
Motivated by recent experimental observations of displacement-field-tuned correlated insulators at integer and half-integer fillings in chirally twisted triple bilayer graphene (CTTBG) [Phys.Rev.Lett.132.246501], we study the single-particle and interacting physics of CTTBG. We find that there are two inequivalent stacking orders, i.e., AB-AB-BC and AB-AB-AB, and both exhibit flat bands with nontrivial topology. We then use the Hartree–Fock approximation to calculate the rich phase diagram of CTTBG at all integer and half-integer fillings in both stacking orders and under the vertical displacement field. Under a small displacement field, the groundstates are flavor polarized states for AB-AB-BC stacking order and intervalley coherent states for AB-AB-AB stacking order at all integer and half-integer fillings. A larger displacement field will turn them into layer-polarized states. At half-integer fillings, the groundstates also exhibit charge density wave (CDW) order. For AB-AB-AB stacking, the groundstates at half-integer fillings are always 2 × 1 stripe state among a range of displacement fields. For AB-AB-BC stacking, the groundstates at half-integer fillings are also 2 × 1 stripe states under a small displacement field and a larger displacement will possibly favor further translation-symmetry-breaking, depending on filling and the direction of the displacement field. We demonstrate that the CDW states observed in the experiment can originate from the strong Coulomb interaction of the flat band electrons.
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