层状 SnS2/石墨烯异质结构电子和光学特性的第一性原理研究

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-09-28 DOI:10.1016/j.mseb.2024.117713
David O. Idisi , Evans M. Benecha , Edson L Meyer
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引用次数: 0

摘要

由于具有能量收集和储存的潜力,层状 SnS2 在能量储存和转换领域越来越受欢迎。目前的研究提出了一种 SnS2/石墨烯异质结构的层状堆叠构型,这种构型可以提高其稳定性和电子传输特性,从而应用于光电和太阳能电池领域。该研究利用第一原理密度泛函理论方法研究了双层和夹层 SnS2/石墨烯异质结构的电子和光学特性,并将其应用于储能领域。在双层和夹层情况下,两种异质结构中 SnS2 的内聚能(0.3604→0.0057→0.0522eV)都很低,这反映了实验的可重复性。此外,还观察到带隙减小(2.338→0.604→0.595eV)以及相应的电荷再分布,这表明电子传导性增强。两种情况下的计算态密度都表明,未占据轨道态的形成增加了,S 3p 轨道态突出,这说明了与锡原子和碳原子协同作用的能力。
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First-principles study of the electronic and optical properties of layered SnS2/ graphene heterostructure
Owing to its potential for energy harvesting and storage, layered SnS2 has become increasingly popular in the energy storage and conversion community. The current study proposes a layered stacking configuration of SnS2/ graphene heterostructure, which could improve its stability and electronic transport properties for optoelectronic and solar cell applications. The study utilizes the first-principles Density Functional Theory approach to investigate the electronic and optical properties of bilayer and sandwich-layered SnS2/graphene heterostructures for energy storage applications. The low magnitude of the cohesive energy of SnS2 in both the bi- and sandwich cases (0.36040.00570.0522eV) of both heterostructures reflect feasible experimental reproducibility. Additionally, a reduction of the band gap (2.3380.6040.595 eV) with corresponding charge redistribution is observed, suggesting increased electron conductivity. The calculated density of states in both cases suggests increased formation of unoccupied orbital states, with prominence of the S 3p orbital states, depicting the capability of synergistic interaction with Sn and C atoms.
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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