基于 eDRAM 的自旋相互作用和泄漏负反馈退火的容差连续时间伊辛机

IF 4.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-09-30 DOI:10.1109/jssc.2024.3461769

Zihan Wu, Jiahao Song, Xiyuan Tang, Bocheng Xu, Haoyang Luo, Youming Yang, Runsheng Wang, Xiaochen Bo, Yuan Wang

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A Variation-Tolerant Continuous-Time Ising Machine With eDRAM-Based Spin Interaction and Leaked Negative Feedback Annealing

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.

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