砷化镓/砷化镓量子阱中的声子拖曳热功率

IF 1.6 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER The European Physical Journal B Pub Date : 2024-10-04 DOI:10.1140/epjb/s10051-024-00790-5

M. M. Babayev, B. H. Mehdyev, Kh. B. Sultanova

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引用次数: 0

摘要

考虑到声子对电子的阻力，计算了具有修正波氏-泰勒约束势的半导体量子阱中的热功率。基于所获得的理论结果，研究了低温下 \(\text{GaAs}/{\text{Al}}_{x}{text{Ga}}\{1-x}As\) 量子阱中热功率的温度依赖性。数值计算表明，我们的理论结果与实验结果非常吻合。这表明修正的波氏势很好地描述了半导体量子阱中的约束势。

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Phonon-drag thermopower in GaAs/AlGaAs quantum wells

Thermopower in a semiconductor quantum well with the modified Pöschl–Teller confining potential is calculated, taking into account the drag of electrons by phonons. Based on the obtained theoretical results, the temperature dependence of thermopower in a \(\text{GaAs}/{\text{Al}}_{x}{\text{Ga}}_{1-x}As\) quantum well at low temperatures has been studied. Numerical calculations show that our theoretical results are in good agreement with experimental ones. This indicates that the modified Pöschl–Teller potential describes well the confinement potential in semiconductor quantum wells.