A. V. Myasoedov, N. A. Bert, N. A. Kalyuzhnyy, A. M. Mintairov
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Morphology and Spatial Distribution of Ordered Domains in GaInP/GaAs(001) According to Transmission Electron Microscopy
The structure of epitaxial films of the GaInP solid solution, in which ordering occurs, has been studied by transmission electron microscopy. The films have been grown by metalorganic vapor-phase epitaxy on GaAs(001) substrates near the half-composition point. The dark-field images obtained using superstructure reflections for cross-sectional and plane-view samples of films have been analyzed. The morphology and relative spatial arrangement of ordered domains have been determined. The phenomenon of spontaneous self-organization of regions with CuPt–B+ and CuPt–B– ordering near the surface has been discovered, while in the bulk of the film, the domains are uniformly distributed and overlap. The effect of spatial separation of domains is attributed to the misfit stress relaxation in the growing epitaxial layer, which changes the surface topology.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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