On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 MHz

In this study, the frequency/voltage dependent profiles of the real/imaginary parts of the complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent (tanδ), ac electrical-conductivity (σac) and phase-angle (θ) were investigated in the frequency and voltage ranges of 2kHz/1 MHz and -2V/4V, respectively. The increase in ε′ and ε” values with decreasing frequency is attributed to surface-states (Nss), surface/dipole-polarizations at the diamond-like carbon (DLC)/Si interface. This behavior of ε′ and ε” is known as Maxwell-Wagner type polarization. The M''-V plot has clear peak for each frequency and its position shifts from −0.6V (at 2 kHz) to 1.65V (at 1 MHz) due to the relaxation process and Nss at low-mid frequencies. Values of ε′ and ε” changed from 16.27 to 8.12 and 456.93 to 8.73 for 3V in the range of 2 kHz and 1 MHz, respectively. Therefore, the fabricated Al/DLC/p-Si can be used as an alternative to insulators for further electronic-charging/energy-storage.