关于 HfxSi1-xO2 四边形化合物结构稳定性、机械和光电特性的综合数值研究

IF 3 3区 化学 Q3 CHEMISTRY, PHYSICAL Computational and Theoretical Chemistry Pub Date : 2024-09-28 DOI:10.1016/j.comptc.2024.114894
Amira Nour Asfora , Slimane Haid , Mawloud Ould Moussa
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引用次数: 0

摘要

这项数值研究探讨了四方 HfxSi1-xO2 固溶体在 x = 0.25、0.5 和 0.75 时的结构稳定性、声子、电子和光学特性。在数值研究过程中,采用了基于密度泛函理论(DFT)的全电位线性化增强平面波方法(FP-LAPW)。采用 Perdew-Burke-Ernzerhof 广义梯度逼近法(PBE-GGA)进行了总能量计算和结构松弛。对于电子特性,我们采用了 Tran-Blaha 修正贝克-约翰逊(TB-mBJ)函数。根据声子特性、内聚性和形成能,这些合金具有很强的热力学稳定性,可以在实验室中通过实验生产和合成。所有化合物的结构参数都与现有结果非常吻合。从电子特性来看,通过 GGA 近似,HfSi3O8 在 ΓV- ΓC 方向上具有较小的直接带隙,等于 1.541 eV,这表明 HfSi3O8 材料是未来太阳能电池制造工艺的高效材料之一。然而,HfSiO4 和 Hf3SiO8 在 ΓV-MC 方向上表现出较大的间接带隙,根据 GGA 近似值,分别为 5.328 eV 和 4.284 eV。出于将其有趣的电子结构用于光电半导体应用的前景,研究人员对 HfSi3O8、HfSiO4 和 Hf3SiO8 的光学特性进行了研究。这项数值研究凸显了这种材料在光学特性方面的首创性。鉴于理论和实验数据的稀缺性,目前的研究可能对这些化合物的未来研究有所帮助。因此,我们的研究结果可以为进一步研究这些氧化物化合物在各种化学、物理和电气应用中的潜在用途铺平道路,从而满足社会经济需求。
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A comprehensive numerical investigation on structural stability, mechanical, and optoelectronic properties of HfxSi1‑xO2 tetragonal compounds from the hafnon Family
This numerical research explores the structural stability, phonons, electronic, and optical properties of tetragonal HfxSi1-xO2 solid solutions for the rates x  = 0.25, 0.5, and 0.75, respectively. During this numerical investigation, the Full-Potential Linearized Augmented Plane Wave method (FP-LAPW) based on the Density Functional Theory (DFT) was employed. Total energy calculations and structure relaxations were carried out using the Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBE-GGA). For electronic properties, we adopted the Tran-Blaha-modified Becke-Johnson (TB-mBJ) function. According to phonon properties, cohesiveness, and formation energy, these alloys have strong thermodynamic stability and could be produced and synthesized experimentally in a laboratory. The structural parameters are in good agreement with the available results for all compounds. From the electronic properties, HfSi3O8 has a small direct band gap in the ΓV- ΓC direction via GGA approximation, equal to 1.541 eV, indicating that the HfSi3O8 material is one of the future-efficient materials for the solar cell fabrication process. However, HfSiO4 and Hf3SiO8 exhibit a large indirect band gap in the ΓV-MC direction, equal to 5.328 eV and 4.284 eV, using GGA approximation, respectively. Motivated by the prospect of using its interesting electronic structure for optoelectronic semiconductor applications, the optical properties of HfSi3O8, HfSiO4, and Hf3SiO8 were studied. This numerical research highlights this material as the first of its kind in terms of optical properties. Given the scarcity of theoretical and experimental data, the current study may be useful for future research on these compounds. Our findings can thus pave the way for further research into the potential use of these oxide compounds in a variety of chemical, physical, and electrical applications aimed at meeting socioeconomic requirements.
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来源期刊
CiteScore
4.20
自引率
10.70%
发文量
331
审稿时长
31 days
期刊介绍: Computational and Theoretical Chemistry publishes high quality, original reports of significance in computational and theoretical chemistry including those that deal with problems of structure, properties, energetics, weak interactions, reaction mechanisms, catalysis, and reaction rates involving atoms, molecules, clusters, surfaces, and bulk matter.
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