Xinran Yang, Zenan Leng, Lang Chen, Zeyu Ge, Jiani Zhou, Feng Sun
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A fully integrated GaAs HBT power amplifier for WLAN 802.11ax applications
A fully integrated gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) power amplifier (PA) for wireless local area network 802.11ax applications is presented in this paper. The structure consists of two-stage power cells. To satisfy the high linearity requirements of IEEE 802.11ax, we analyzed the distortion of amplitude-to-amplitude and amplitude-to-phase. Due to the thermal and voltage sensitivity of GaAs HBT, an adaptive bias circuit is designed to ensure linearity. Moreover, an efficient passive output matching network is designed by analyzing the efficiency of the passive network. The design electromagnetic structure is fabricated in a 2-μm GaAs HBT process. Under continuous wave testing, the output power reaches 27.2 dBm and the maximum efficiency of 28% at 2.4 GHz. Under the excitation of a 40 MHz 1024-quadratic amplitude modulation signal, the output power meeting error vector magnitude of −35 dB reaches 16.8–17.2 dBm from 2.4 to 2.5 GHz.
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Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas.
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