Taotao Xu, Hongchen Chen, Cao Wan, Shuai Deng, Pei Qin, Haoshen Zhu, Quan Xue
{"title":"适用于 5 G 应用、具有 32 db 线性增益范围的 28 GHz 平衡先导型 LNA","authors":"Taotao Xu, Hongchen Chen, Cao Wan, Shuai Deng, Pei Qin, Haoshen Zhu, Quan Xue","doi":"10.1002/mop.34357","DOIUrl":null,"url":null,"abstract":"<p>This letter presents a 28 GHz balun-first low noise amplifier (LNA) featuring a wide dB-linear variable gain range. The architecture of LNA includes three-stage cascode amplifiers. An integrated balun at the input stage provides RF ESD protection and converts a single-ended signal to a differential one (S-to-D). A transformer-based dual-resonant matching network is designed and analyzed to achieve wideband performance. To realize a continuous dB-linear variable gain range and consistent input/output matching, gain control is implemented in the second stage using a 5-bit digital-to-analog converter (DAC) for a 32 dB gain range. The DAC can generate a nonlinear analog voltage to control the gate of the common-gate transistor in the second cascode stage, inversely compensating for the nonlinear gain variations of the cascode amplifier. The LNA is fabricated in 65-nm CMOS process with a core size of 0.154 mm². Measurement results exhibit a maximum gain of 33.5 dB and a minimum noise figure (NF) of 3.65 dB with a 3-dB bandwidth of 23–29.5 GHz. The measured variable gain range is approximately 32 dB across 32 different gain states, with a linear gain step of ~1 dB per state and an IP1dB ranging from −6.5 dBm to −35.25 dBm. The power consumption is 35.4–48 mW from a 1.2 V supply voltage.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 28 GHz balun-first LNA with db-linear 32 db gain range for 5 G applications\",\"authors\":\"Taotao Xu, Hongchen Chen, Cao Wan, Shuai Deng, Pei Qin, Haoshen Zhu, Quan Xue\",\"doi\":\"10.1002/mop.34357\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This letter presents a 28 GHz balun-first low noise amplifier (LNA) featuring a wide dB-linear variable gain range. The architecture of LNA includes three-stage cascode amplifiers. An integrated balun at the input stage provides RF ESD protection and converts a single-ended signal to a differential one (S-to-D). A transformer-based dual-resonant matching network is designed and analyzed to achieve wideband performance. To realize a continuous dB-linear variable gain range and consistent input/output matching, gain control is implemented in the second stage using a 5-bit digital-to-analog converter (DAC) for a 32 dB gain range. The DAC can generate a nonlinear analog voltage to control the gate of the common-gate transistor in the second cascode stage, inversely compensating for the nonlinear gain variations of the cascode amplifier. The LNA is fabricated in 65-nm CMOS process with a core size of 0.154 mm². Measurement results exhibit a maximum gain of 33.5 dB and a minimum noise figure (NF) of 3.65 dB with a 3-dB bandwidth of 23–29.5 GHz. The measured variable gain range is approximately 32 dB across 32 different gain states, with a linear gain step of ~1 dB per state and an IP1dB ranging from −6.5 dBm to −35.25 dBm. The power consumption is 35.4–48 mW from a 1.2 V supply voltage.</p>\",\"PeriodicalId\":18562,\"journal\":{\"name\":\"Microwave and Optical Technology Letters\",\"volume\":\"66 10\",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2024-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Optical Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/mop.34357\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Optical Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/mop.34357","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 28 GHz balun-first LNA with db-linear 32 db gain range for 5 G applications
This letter presents a 28 GHz balun-first low noise amplifier (LNA) featuring a wide dB-linear variable gain range. The architecture of LNA includes three-stage cascode amplifiers. An integrated balun at the input stage provides RF ESD protection and converts a single-ended signal to a differential one (S-to-D). A transformer-based dual-resonant matching network is designed and analyzed to achieve wideband performance. To realize a continuous dB-linear variable gain range and consistent input/output matching, gain control is implemented in the second stage using a 5-bit digital-to-analog converter (DAC) for a 32 dB gain range. The DAC can generate a nonlinear analog voltage to control the gate of the common-gate transistor in the second cascode stage, inversely compensating for the nonlinear gain variations of the cascode amplifier. The LNA is fabricated in 65-nm CMOS process with a core size of 0.154 mm². Measurement results exhibit a maximum gain of 33.5 dB and a minimum noise figure (NF) of 3.65 dB with a 3-dB bandwidth of 23–29.5 GHz. The measured variable gain range is approximately 32 dB across 32 different gain states, with a linear gain step of ~1 dB per state and an IP1dB ranging from −6.5 dBm to −35.25 dBm. The power consumption is 35.4–48 mW from a 1.2 V supply voltage.
期刊介绍:
Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas.
- RF, Microwave, and Millimeter Waves
- Antennas and Propagation
- Submillimeter-Wave and Infrared Technology
- Optical Engineering
All papers are subject to peer review before publication