{"title":"具有 PAM3 优化 TRX 均衡和 ZQ 校准功能的 16-Gb 37-Gb/s GDDR7 DRAM","authors":"Sung-Yong Cho;Moon-Chul Choi;Jaehyeok Baek;Donggun An;Sang-Hoon Kim;Daewoong Lee;Seongyeal Yang;Se-Mi Kim;Gil-Young Kang;Juseop Park;Kyung-Ho Lee;Hwan-Chul Jung;Gun-Hee Cho;Chan-Yong Lee;Hye-Ran Kim;Yong-Jae Shin;Hanna Park;Sang-Yong Lee;Jonghyuk Kim;Bokyeon Won;Jungil Mok;Kijin Kim;Un-Hak Lim;Hongjun Jin;YoungSeok Lee;Young-Tae Kim;Heonjoo Ha;Jinchan Ahn;Won Ju Sung;Yoontaek Jang;Hoyoung Song;Hyodong Ban;Tae-Hoon Park;Changsik Yoo;Tae-Young Oh;SangJoon Hwang","doi":"10.1109/JSSC.2024.3472463","DOIUrl":null,"url":null,"abstract":"The development of the graphics double-data-rate 7 (GDDR7) dynamic random access memory (DRAM) standard aims to overcome the constraints of its predecessor, GDDR6, in order to achieve higher speed operation. This article introduces a 16-Gb GDDR7 DRAM with three-level pulse amplitude modulation (PAM3) interface in a DRAM process. The proposed GDDR7 consists of two dies/four channels to support both two- and four-channel mode configuration. An adaptive gain-controlled feedforward equalizer (FFE) is implemented in the transmitter (TX) and data-dependent separately gain-controlled one-tap decision feedback equalizer (DFE) is proposed in the receiver (RX). In addition, the proposed ZQ calibration scheme uses alternately switched reference voltages to enhance the level mismatch ratio (RLM) of the PAM3 signaling. Moreover, low-power and low-jitter clocking techniques with a low-dropout (LDO) regulator and CMOS distribution are employed for WCK distribution; thereby, 60 mA per die of current reduction and 0.16 ps/mV of power-supply-induced jitter (PSIJ) could be achieved. The proposed GDDR7 achieves 37 Gb/s at 1.2 V and 32 Gb/s at 1.1 V with a 1z-nm DRAM technology.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"184-196"},"PeriodicalIF":5.6000,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration\",\"authors\":\"Sung-Yong Cho;Moon-Chul Choi;Jaehyeok Baek;Donggun An;Sang-Hoon Kim;Daewoong Lee;Seongyeal Yang;Se-Mi Kim;Gil-Young Kang;Juseop Park;Kyung-Ho Lee;Hwan-Chul Jung;Gun-Hee Cho;Chan-Yong Lee;Hye-Ran Kim;Yong-Jae Shin;Hanna Park;Sang-Yong Lee;Jonghyuk Kim;Bokyeon Won;Jungil Mok;Kijin Kim;Un-Hak Lim;Hongjun Jin;YoungSeok Lee;Young-Tae Kim;Heonjoo Ha;Jinchan Ahn;Won Ju Sung;Yoontaek Jang;Hoyoung Song;Hyodong Ban;Tae-Hoon Park;Changsik Yoo;Tae-Young Oh;SangJoon Hwang\",\"doi\":\"10.1109/JSSC.2024.3472463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of the graphics double-data-rate 7 (GDDR7) dynamic random access memory (DRAM) standard aims to overcome the constraints of its predecessor, GDDR6, in order to achieve higher speed operation. This article introduces a 16-Gb GDDR7 DRAM with three-level pulse amplitude modulation (PAM3) interface in a DRAM process. The proposed GDDR7 consists of two dies/four channels to support both two- and four-channel mode configuration. An adaptive gain-controlled feedforward equalizer (FFE) is implemented in the transmitter (TX) and data-dependent separately gain-controlled one-tap decision feedback equalizer (DFE) is proposed in the receiver (RX). In addition, the proposed ZQ calibration scheme uses alternately switched reference voltages to enhance the level mismatch ratio (RLM) of the PAM3 signaling. Moreover, low-power and low-jitter clocking techniques with a low-dropout (LDO) regulator and CMOS distribution are employed for WCK distribution; thereby, 60 mA per die of current reduction and 0.16 ps/mV of power-supply-induced jitter (PSIJ) could be achieved. The proposed GDDR7 achieves 37 Gb/s at 1.2 V and 32 Gb/s at 1.1 V with a 1z-nm DRAM technology.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"60 1\",\"pages\":\"184-196\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2024-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10716770/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10716770/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration
The development of the graphics double-data-rate 7 (GDDR7) dynamic random access memory (DRAM) standard aims to overcome the constraints of its predecessor, GDDR6, in order to achieve higher speed operation. This article introduces a 16-Gb GDDR7 DRAM with three-level pulse amplitude modulation (PAM3) interface in a DRAM process. The proposed GDDR7 consists of two dies/four channels to support both two- and four-channel mode configuration. An adaptive gain-controlled feedforward equalizer (FFE) is implemented in the transmitter (TX) and data-dependent separately gain-controlled one-tap decision feedback equalizer (DFE) is proposed in the receiver (RX). In addition, the proposed ZQ calibration scheme uses alternately switched reference voltages to enhance the level mismatch ratio (RLM) of the PAM3 signaling. Moreover, low-power and low-jitter clocking techniques with a low-dropout (LDO) regulator and CMOS distribution are employed for WCK distribution; thereby, 60 mA per die of current reduction and 0.16 ps/mV of power-supply-induced jitter (PSIJ) could be achieved. The proposed GDDR7 achieves 37 Gb/s at 1.2 V and 32 Gb/s at 1.1 V with a 1z-nm DRAM technology.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.