具有 PAM3 优化 TRX 均衡和 ZQ 校准功能的 16-Gb 37-Gb/s GDDR7 DRAM

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-10-15 DOI:10.1109/JSSC.2024.3472463
Sung-Yong Cho;Moon-Chul Choi;Jaehyeok Baek;Donggun An;Sang-Hoon Kim;Daewoong Lee;Seongyeal Yang;Se-Mi Kim;Gil-Young Kang;Juseop Park;Kyung-Ho Lee;Hwan-Chul Jung;Gun-Hee Cho;Chan-Yong Lee;Hye-Ran Kim;Yong-Jae Shin;Hanna Park;Sang-Yong Lee;Jonghyuk Kim;Bokyeon Won;Jungil Mok;Kijin Kim;Un-Hak Lim;Hongjun Jin;YoungSeok Lee;Young-Tae Kim;Heonjoo Ha;Jinchan Ahn;Won Ju Sung;Yoontaek Jang;Hoyoung Song;Hyodong Ban;Tae-Hoon Park;Changsik Yoo;Tae-Young Oh;SangJoon Hwang
{"title":"具有 PAM3 优化 TRX 均衡和 ZQ 校准功能的 16-Gb 37-Gb/s GDDR7 DRAM","authors":"Sung-Yong Cho;Moon-Chul Choi;Jaehyeok Baek;Donggun An;Sang-Hoon Kim;Daewoong Lee;Seongyeal Yang;Se-Mi Kim;Gil-Young Kang;Juseop Park;Kyung-Ho Lee;Hwan-Chul Jung;Gun-Hee Cho;Chan-Yong Lee;Hye-Ran Kim;Yong-Jae Shin;Hanna Park;Sang-Yong Lee;Jonghyuk Kim;Bokyeon Won;Jungil Mok;Kijin Kim;Un-Hak Lim;Hongjun Jin;YoungSeok Lee;Young-Tae Kim;Heonjoo Ha;Jinchan Ahn;Won Ju Sung;Yoontaek Jang;Hoyoung Song;Hyodong Ban;Tae-Hoon Park;Changsik Yoo;Tae-Young Oh;SangJoon Hwang","doi":"10.1109/JSSC.2024.3472463","DOIUrl":null,"url":null,"abstract":"The development of the graphics double-data-rate 7 (GDDR7) dynamic random access memory (DRAM) standard aims to overcome the constraints of its predecessor, GDDR6, in order to achieve higher speed operation. This article introduces a 16-Gb GDDR7 DRAM with three-level pulse amplitude modulation (PAM3) interface in a DRAM process. The proposed GDDR7 consists of two dies/four channels to support both two- and four-channel mode configuration. An adaptive gain-controlled feedforward equalizer (FFE) is implemented in the transmitter (TX) and data-dependent separately gain-controlled one-tap decision feedback equalizer (DFE) is proposed in the receiver (RX). In addition, the proposed ZQ calibration scheme uses alternately switched reference voltages to enhance the level mismatch ratio (RLM) of the PAM3 signaling. Moreover, low-power and low-jitter clocking techniques with a low-dropout (LDO) regulator and CMOS distribution are employed for WCK distribution; thereby, 60 mA per die of current reduction and 0.16 ps/mV of power-supply-induced jitter (PSIJ) could be achieved. The proposed GDDR7 achieves 37 Gb/s at 1.2 V and 32 Gb/s at 1.1 V with a 1z-nm DRAM technology.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"184-196"},"PeriodicalIF":5.6000,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration\",\"authors\":\"Sung-Yong Cho;Moon-Chul Choi;Jaehyeok Baek;Donggun An;Sang-Hoon Kim;Daewoong Lee;Seongyeal Yang;Se-Mi Kim;Gil-Young Kang;Juseop Park;Kyung-Ho Lee;Hwan-Chul Jung;Gun-Hee Cho;Chan-Yong Lee;Hye-Ran Kim;Yong-Jae Shin;Hanna Park;Sang-Yong Lee;Jonghyuk Kim;Bokyeon Won;Jungil Mok;Kijin Kim;Un-Hak Lim;Hongjun Jin;YoungSeok Lee;Young-Tae Kim;Heonjoo Ha;Jinchan Ahn;Won Ju Sung;Yoontaek Jang;Hoyoung Song;Hyodong Ban;Tae-Hoon Park;Changsik Yoo;Tae-Young Oh;SangJoon Hwang\",\"doi\":\"10.1109/JSSC.2024.3472463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of the graphics double-data-rate 7 (GDDR7) dynamic random access memory (DRAM) standard aims to overcome the constraints of its predecessor, GDDR6, in order to achieve higher speed operation. This article introduces a 16-Gb GDDR7 DRAM with three-level pulse amplitude modulation (PAM3) interface in a DRAM process. The proposed GDDR7 consists of two dies/four channels to support both two- and four-channel mode configuration. An adaptive gain-controlled feedforward equalizer (FFE) is implemented in the transmitter (TX) and data-dependent separately gain-controlled one-tap decision feedback equalizer (DFE) is proposed in the receiver (RX). In addition, the proposed ZQ calibration scheme uses alternately switched reference voltages to enhance the level mismatch ratio (RLM) of the PAM3 signaling. Moreover, low-power and low-jitter clocking techniques with a low-dropout (LDO) regulator and CMOS distribution are employed for WCK distribution; thereby, 60 mA per die of current reduction and 0.16 ps/mV of power-supply-induced jitter (PSIJ) could be achieved. The proposed GDDR7 achieves 37 Gb/s at 1.2 V and 32 Gb/s at 1.1 V with a 1z-nm DRAM technology.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"60 1\",\"pages\":\"184-196\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2024-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10716770/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10716770/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

图形双数据速率7 (GDDR7)动态随机存取存储器(DRAM)标准的发展旨在克服其前身GDDR6的限制,以实现更高的运行速度。本文介绍了一种采用三电平脉冲调幅(PAM3)接口的16gb GDDR7 DRAM。提议的GDDR7由两个芯片/四个通道组成,以支持两通道和四通道模式配置。在发送端(TX)中实现了自适应增益控制前馈均衡器(FFE),在接收端(RX)中提出了数据相关的单独增益控制一分路决策反馈均衡器(DFE)。此外,所提出的ZQ校准方案采用交替切换的参考电压来提高PAM3信号的电平失配比(RLM)。此外,采用低差(LDO)稳压器和CMOS分布的低功耗和低抖动时钟技术进行WCK分布;因此,每个芯片的电流减少60 mA,电源诱发抖动(PSIJ)可以达到0.16 ps/mV。提出的GDDR7采用1z-nm DRAM技术,在1.2 V下实现37 Gb/s,在1.1 V下实现32 Gb/s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration
The development of the graphics double-data-rate 7 (GDDR7) dynamic random access memory (DRAM) standard aims to overcome the constraints of its predecessor, GDDR6, in order to achieve higher speed operation. This article introduces a 16-Gb GDDR7 DRAM with three-level pulse amplitude modulation (PAM3) interface in a DRAM process. The proposed GDDR7 consists of two dies/four channels to support both two- and four-channel mode configuration. An adaptive gain-controlled feedforward equalizer (FFE) is implemented in the transmitter (TX) and data-dependent separately gain-controlled one-tap decision feedback equalizer (DFE) is proposed in the receiver (RX). In addition, the proposed ZQ calibration scheme uses alternately switched reference voltages to enhance the level mismatch ratio (RLM) of the PAM3 signaling. Moreover, low-power and low-jitter clocking techniques with a low-dropout (LDO) regulator and CMOS distribution are employed for WCK distribution; thereby, 60 mA per die of current reduction and 0.16 ps/mV of power-supply-induced jitter (PSIJ) could be achieved. The proposed GDDR7 achieves 37 Gb/s at 1.2 V and 32 Gb/s at 1.1 V with a 1z-nm DRAM technology.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
期刊最新文献
A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems A 0.4-V 988-nW Tiny Footprint Time-Domain Audio Feature Extraction ASIC for Keyword Spotting Using Injection-Locked Oscillators Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1