α-GeO2 中的压力诱导非晶化:结构演变和介电性质的改善

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Physica B-condensed Matter Pub Date : 2024-10-09 DOI:10.1016/j.physb.2024.416612
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摘要

本文报告了利用原位拉曼光谱测量、交变电流阻抗光谱测量和第一原理计算对压缩条件下 α-GeO2 的结构演变和介电性质的研究。研究发现,在 5.0 GPa 时,α-GeO2 中 Ge 的配位数从 4 增加到 6,而在 11.5 GPa 时形成无定形态,并保持到环境条件下。交替电流阻抗谱测量结果表明,在压力下电阻的变化与配位数的变化趋势相反。这一现象可归因于压力引起的非键合氧原子的出现,以及 GeO4 四面体中氧原子浓度的增加。同时,研究还发现压力诱导非晶化在一定程度上改善了介电性能,这对于合成具有更好介电性能的非晶氧化物具有重要意义。
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Pressure-induced amorphization in α-GeO2: Structural evolution and improved dielectric properties
In this paper, we report the investigation of the structure evolution and dielectric properties of α-GeO2 under compression using in-situ Raman spectroscopic measurements, alternate current impedance spectroscopic measurements, and first-principal calculations. It is discovered that the coordination number of Ge in α-GeO2 increases from 4 to 6 at 5.0 GPa, while an amorphous state forms at 11.5 GPa and maintains to ambient conditions. The alternate current impedance spectroscopy measurements revealed that the variation of electrical resistance shows opposite tendencies at pressures against that of the coordination number. This phenomenon is ascribed to the pressure-induced emergence of unbonded oxygen atoms, and thus the increase of the concentration of oxygen ions in the GeO4 tetrahedra. Meanwhile,it is found that the application of pressure-induced amorphization improves the dielectric properties to a certain extent, which is of significant importance to provide a valuable approach for the synthesis of amorphous oxides with better dielectric properties.
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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