Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates

Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of excellent characteristics, enabling them to overcome the performance limitations of traditional silicon-based power devices. This comprehensive review discusses the challenges in the fabrication processes and device structures of p-type GaN (p-GaN) gate HEMTs on silicon substrates. Mainly by using Citespace software, this paper demonstrates the analytical results of keyword co-occurrence based on references related to p-GaN gate HEMTs from the core collection of Web of Science, revealing the prominent research topics in this area and discussing the relevant influencing factors and mechanisms of the electrical performance of p-GaN gate HEMTs. Moreover, various methods for optimizing the fabrication processes and device structures proposed in recent years are also reviewed. The future development of p-GaN gate HEMTs is explored, including the integration with more devices, the development of appropriate reliability verification standards, the expansion of production capabilities, and the incorporation of emerging two-dimensional materials.