用于 224-Gb/s SerDes 接收器的 3-nm CMOS 7 位 1.75-GS/s 6.9-fJ/conv.-step FoM$_{mathrm{w}}$ Loop-Unrolled 全异步 SAR ADC

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-10-21 DOI:10.1109/JSSC.2024.3449115
Chakravarti Bheemisetti;Karunanidhan Pandey;Idan Lotan;Gadi Ori;Ahmad Khairi;Yoel Krupnik;Udi Virobnik;Boyapati Subrahmanyam;Ariel Cohen;Nagendra Krishnapura
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引用次数: 0

摘要

本文介绍了一种1.75-GS/s单通道7位连续逼近寄存器(SAR)模数转换器(ADC),该转换器基于环展开结构,n位比较器为n位。为了降低功耗和降低设计复杂度,提出了一种无内存全异步SAR。提出了一种双尾反馈(DTFB)动态比较器,以满足速度要求和最小化热噪声,热噪声是7位SAR ADC的关键参数。原型ADC采用3纳米CMOS工艺实现。该ADC在Nyquist, 0.00055-mm2面积下的SNDR/SFDR为37/49 dB,功耗为0.69 mw。这导致了同类最佳的瓦尔登功绩系数(FoMw)为6.9 fJ/conv。-step和Nyquist的158 dB的Schreier form。该SAR ADC用于64路时间交错(TI) ADC,可实现112-GS/s的操作,用于基于ADC的224 gb /s PAM4 SerDes接收器。
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A 7-bit 1.75-GS/s 6.9-fJ/conv.-step FoMw Loop-Unrolled Fully Asynchronous SAR ADC in 3-nm CMOS for a 224-Gb/s SerDes Receiver
This article presents a 1.75-GS/s single-channel 7-bit successive approximation register (SAR) analog-to-digital converter (ADC) that is based on loop-unrolled architecture with N-comparators for N-bits. A memory-less fully asynchronous SAR is proposed to lower power consumption and reduce design complexity. A double-tail feed-backward (DTFB) dynamic comparator is proposed to meet the required speed and minimize thermal noise, which is a critical parameter for a 7-bit SAR ADC. The prototype ADC is implemented in a 3-nm CMOS process. The ADC achieves an SNDR/SFDR of 37/49 dB at Nyquist, 0.00055-mm2 area, and consumes 0.69-mW power. This leads to a best-in-class Walden figure of merit (FoMw) of 6.9 fJ/conv.-step and a Schreier FoM of 158 dB at Nyquist. This SAR ADC is used in a 64-way time-interleaved (TI) ADC to achieve 112-GS/s operation for use in an ADC-based 224-Gb/s PAM4 SerDes receiver.
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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