平面和沟槽式 SiC MOSFET 偏置温度不稳定性恢复特性的综合研究

IF 4.6 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Emerging and Selected Topics in Power Electronics Pub Date : 2024-10-23 DOI:10.1109/jestpe.2024.3485055
Kaiwei Li, Pengju Sun, Xinghao Zhou, Lan Chen, Qingsong Liu
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Comprehensive Investigations on Recovery Characteristics of Bias Temperature Instability in Planar and Trench SiC MOSFETs
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来源期刊
CiteScore
12.50
自引率
9.10%
发文量
547
审稿时长
3 months
期刊介绍: The aim of the journal is to enable the power electronics community to address the emerging and selected topics in power electronics in an agile fashion. It is a forum where multidisciplinary and discriminating technologies and applications are discussed by and for both practitioners and researchers on timely topics in power electronics from components to systems.
期刊最新文献
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