A Fully Integrated Electrostatic Charge Boosting Rectifier for Triboelectric Energy Harvesting

The various application scenarios of triboelectric nanogenerator (TENG) have attracted increasing research interest, while one of the biggest challenges is the energy extraction efficiency. Due to the small and time-varying inherent capacitor in a TENG, the previous energy extraction techniques e.g., full-bridge rectifier (FBR) and bias-flip (BF) rectifier, performed not well. To extract more energy from TENG, this article proposed a fully integrated switched-capacitor (SC) rectifier with an electrostatic charge boosting (ECB) technique, achieving simultaneous extraction from the synchronized triboelectric energy and self-excited electrostatic energy. The proposed rectifier was fabricated in a 180-nm BCD process. With the proposed ECB technique, the theoretical analysis and measurements show a quadratically increasing output power with respect to the rectification voltage, attaining a constant maximum power point (MPP) at the breakdown voltage of the circuit. A maximum output power of $127.6~{\mu }$ W is measured with a TENG fabricated in-house. Compared to a passive FBR, the proposed rectifier enhances the output power by 14 times.