{"title":"带有 V2AlC 可饱和吸收器的被动模式锁定 Tm:YAP 激光器","authors":"Zhaoyu Ma, Qianqian Hao, Huanli Wang, Qiong Gao, Shuyi Mi, Daguang Li, Linjun Li, Baoyu Xu","doi":"10.1002/mop.70007","DOIUrl":null,"url":null,"abstract":"<p>In this work, a V<sub>2</sub>AlC-based saturable absorber (SA) was applied to a 2 μm band passively mode-locked (PML) laser. The saturation intensity and modulation depth of the V<sub>2</sub>AlC-based SA were detected by the I-scan method, which were 225.05 MW/cm<sup>2</sup> and 7.68%, respectively. In the PML mode, an average power of 2.12 W at 1939 nm and a pulse width of 1077 ps at 82.49 MHz were obtained from the Tm:YAP laser. In addition, the laser exhibited a good beam quality factor (<i>M</i><sup>2</sup>) which was measured to be less than 1.2. These results will pave the way for the application of V<sub>2</sub>AlC-based SA in ultrafast lasers.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Passively mode-locked Tm:YAP laser with a V2AlC saturable absorber\",\"authors\":\"Zhaoyu Ma, Qianqian Hao, Huanli Wang, Qiong Gao, Shuyi Mi, Daguang Li, Linjun Li, Baoyu Xu\",\"doi\":\"10.1002/mop.70007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this work, a V<sub>2</sub>AlC-based saturable absorber (SA) was applied to a 2 μm band passively mode-locked (PML) laser. The saturation intensity and modulation depth of the V<sub>2</sub>AlC-based SA were detected by the I-scan method, which were 225.05 MW/cm<sup>2</sup> and 7.68%, respectively. In the PML mode, an average power of 2.12 W at 1939 nm and a pulse width of 1077 ps at 82.49 MHz were obtained from the Tm:YAP laser. In addition, the laser exhibited a good beam quality factor (<i>M</i><sup>2</sup>) which was measured to be less than 1.2. These results will pave the way for the application of V<sub>2</sub>AlC-based SA in ultrafast lasers.</p>\",\"PeriodicalId\":18562,\"journal\":{\"name\":\"Microwave and Optical Technology Letters\",\"volume\":\"66 10\",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2024-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Optical Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/mop.70007\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Optical Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/mop.70007","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Passively mode-locked Tm:YAP laser with a V2AlC saturable absorber
In this work, a V2AlC-based saturable absorber (SA) was applied to a 2 μm band passively mode-locked (PML) laser. The saturation intensity and modulation depth of the V2AlC-based SA were detected by the I-scan method, which were 225.05 MW/cm2 and 7.68%, respectively. In the PML mode, an average power of 2.12 W at 1939 nm and a pulse width of 1077 ps at 82.49 MHz were obtained from the Tm:YAP laser. In addition, the laser exhibited a good beam quality factor (M2) which was measured to be less than 1.2. These results will pave the way for the application of V2AlC-based SA in ultrafast lasers.
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Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas.
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