A self-powered UV photodetector based on a β-Ga2O3/p-GaN p-n heterojunction fabricated via magnetron sputtering

In recent years, self-powered ultraviolet photodetectors have attracted significant attention worldwide, driven by the growing demand in both military and civilian sectors. In this study, β-Ga₂O₃ thin films with controllable quality were grown using the magnetron sputtering method. Furthermore, a self-powered UV photodetector based on a β-Ga₂O₃/p-GaN heterojunction was successfully fabricated. The photodetector exhibited a responsivity of R₂₅₄ = 0.11 A/W and R₃₆₅ = 0.04 A/W under 254 nm and 365 nm illumination, respectively, with fast response times under zero bias (rise/decay times of 0.74/0.5 s and 0.73/0.24 s). It demonstrated excellent switching characteristics at 0 V bias and varied photocurrent gains under different applied biases. This work validates the controlled growth method for β-Ga₂O₃ thin films and provides an effective approach for developing self-powered UV detectors with low dark current and high stability.